DMC3016LSD Datasheet. Specs and Replacement

Type Designator: DMC3016LSD  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.5 nS

Cossⓘ - Output Capacitance: 119 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: SO-8

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DMC3016LSD datasheet

 ..1. Size:464K  diodes
dmc3016lsd.pdf pdf_icon

DMC3016LSD

DMC3016LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Input Capacitance Device V(BR)DSS RDS(on) max TA = +25 C Low On-Resistance Fast Switching Speed 16m @ VGS = 10V 8.2A Q2 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20m @ VGS = 4.5V 7.3A Halogen and Antimony Free. Green Device (Not... See More ⇒

 8.1. Size:179K  diodes
dmc3018lsd.pdf pdf_icon

DMC3016LSD

DMC3018LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data Complementary Pair MOSFET Case SO-8 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 N-Channel 20m @ 10V Moisture Sensitivity Level 1 per J-STD-020 32m @ 4.5V Terminals Connections See Diag... See More ⇒

 8.2. Size:1031K  cn vbsemi
dmc3018lsd-13.pdf pdf_icon

DMC3016LSD

DMC3018LSD-13 www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 a... See More ⇒

 9.1. Size:446K  fairchild semi
fdmc3020dc.pdf pdf_icon

DMC3016LSD

October 2010 FDMC3020DC N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 6.25 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 6.25 m at VGS = 10 V, ID = 12 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 9.0 m a... See More ⇒

Detailed specifications: DMC1229UFDB, DMC2038LVT, DMC2041UFDB, DMC2400UV, DMC25D0UVT, DMC25D1UVT, DMC2700UDM, DMC2990UDJ, 7N65, DMC3025LSD, DMC3028LSDX, DMC31D5UDJ, DMC3400SDW, DMC4015SSD, DMC4029SSD, DMC4047LSD, DMC6040SSD

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