DMC3016LSD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: DMC3016LSD
Тип транзистора: MOSFET
Полярность: NP
Pdⓘ - Максимальная рассеиваемая мощность: 1.2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 8.2 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 16.5 ns
Cossⓘ - Выходная емкость: 119 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
Тип корпуса: SO-8
Аналог (замена) для DMC3016LSD
DMC3016LSD Datasheet (PDF)
dmc3016lsd.pdf
DMC3016LSD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Input Capacitance Device V(BR)DSS RDS(on) max TA = +25C Low On-Resistance Fast Switching Speed 16m @ VGS = 10V 8.2A Q2 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20m @ VGS = 4.5V 7.3A Halogen and Antimony Free. Green Device (Not
dmc3018lsd.pdf
DMC3018LSDCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data Complementary Pair MOSFET Case: SO-8 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 N-Channel: 20m @ 10V Moisture Sensitivity: Level 1 per J-STD-020 32m @ 4.5V Terminals Connections: See Diag
dmc3018lsd-13.pdf
DMC3018LSD-13www.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 a
fdmc3020dc.pdf
October 2010FDMC3020DCN-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 6.25 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 6.25 m at VGS = 10 V, ID = 12 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 9.0 m a
dmc3032lsd.pdf
DMC3032LSDCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SO-8 N-Channel: 32m @ 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 46m @ 4.5V Moisture Sensitivity: Level 1 per J-STD-020 P-Channel: 39m @ 10V 53m @ 4.5V Terminals Connecti
dmc3028lsdx.pdf
DMC3028LSDX Electrical Characteristics Q2 (@TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS -30 V VGS = 0V, ID = -250A Zero Gate Voltage Drain Current IDSS -1 A VDS = -24V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS
dmc3028lsd.pdf
A Product Line ofDiodes IncorporatedDMC3028LSD30V COMPLEMENTARY DUAL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID Device V(BR)DSS RDS(on) Fast switching speed TA = 25C Green Component and RoHS Compliant (Note 1) 28m @ VGS= 10V 7.1A Q1 30V45m @ VGS=
dmc3021lsd.pdf
DMC3021LSDCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SO-8 N-Channel: 21m @ 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 32m @ 4.5V Moisture Sensitivity: Level 1 per J-STD-020 P-Channel: 39m @ 10V 53m @ 4.5V Terminals Connecti
dmc3035lsd.pdf
DMC3035LSDCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Complementary Pair MOSFETs Case: SOP-8L Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 N-Channel: 35m @ 10V Moisture Sensitivity: Level 1 pe
dmc3025lsd.pdf
DMC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET Product Summary Features ID MAX Low On-Resistance Device V(BR)DSS RDS(ON) max Package Low Input Capacitance TA = +25C Fast Switching Speed 20m @ VGS = 10V 8.5A N-Channel 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 7.0A 32m @ VGS = 4.5V SO-8 Halogen and Antimony Free. Gr
dmc3021lsdq.pdf
DMC3021LSDQCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features ID Max Low On-ResistanceDevice V(BR)DSS RDS(on) max TA = +25C Low Input Capacitance Fast Switching Speed 21m @ VGS = 10V 8.5A Q2 30V Low Input/Output Leakage 32m @ VGS = 4.5V 7.2A Complementary Pair MOSFET39m @ VGS = -10V -7A Q1 -30V Totally Lead-Free & Fully
dmc3036lsd.pdf
DMC3036LSDCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features Mechanical Data Complementary Pair MOSFETs Case: SOP-8L Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 N-Channel: 36m @ 10V Moisture Sensitivity: Level 1 per J-STD-020D 61m @ 4.5V Terminals Connections: See
dmc3021lk4.pdf
DMC3021LK4COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm Profile Ideal for Low Profile Applications ID max Device V(BR)DSS RDS(ON) max TC = +25C PCB Footprint of 4mm2 Low Gate Threshold Voltage 21m @ VGS = 10V 14A Q1 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 32m @ VGS = 4.5V 14A Halog
dmc30401.pdf
DMC30401Total pages pageTentativeDMC30401Silicon NPN epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplificationMarking Symbol : A8Package Code : SSSMini6-F2-BInternal Connection6 5 4Absolute Maximum RatingsTa = 25 CParameter Symbol Rating UnitCollector-base voltage (Emitter open) VCBO 60 VCollector-emitter voltage (Base open) VCE
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918