SFH9244 Todos los transistores

 

SFH9244 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SFH9244
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 126 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 175 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: TO3P
 

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SFH9244 Datasheet (PDF)

 ..1. Size:920K  samsung
 sfh9244.pdf pdf_icon

SFH9244

Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = -8.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -250V Lower RDS(ON) : 0.549 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

 8.1. Size:207K  fairchild semi
 sfh9240.pdf pdf_icon

SFH9244

SFH9240Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -11 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current : 10 A(Max.) @ VDS = -200V Lower RDS(ON) : 0.344 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Ch

 8.2. Size:911K  samsung
 sfh9240.pdf pdf_icon

SFH9244

Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -11 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V Lower RDS(ON) : 0.344 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

 9.1. Size:545K  fairchild semi
 sfh9250l.pdf pdf_icon

SFH9244

Advanced Power MOSFETSFH9250LFEATURESBVDSS = -200 V Logic-Level Gate DriveRDS(on) = 0.23 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = -19.5 A Lower Input Capacitances Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current : 10uA (Max.) @ VDS=-200V Lower RDS(ON) : 0.175 (Typ.)1231.Gate 2. D

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FDB8445 | NTMS4937N | SP2700 | FQP17P06 | IPW60R180C7 | FDMC7678 | SSS4N80A

 

 
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