All MOSFET. SFH9244 Datasheet

 

SFH9244 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SFH9244
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 126 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO3P

 SFH9244 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SFH9244 Datasheet (PDF)

 ..1. Size:920K  samsung
 sfh9244.pdf

SFH9244 SFH9244

Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = -8.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -250V Lower RDS(ON) : 0.549 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

 8.1. Size:207K  fairchild semi
 sfh9240.pdf

SFH9244 SFH9244

SFH9240Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -11 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current : 10 A(Max.) @ VDS = -200V Lower RDS(ON) : 0.344 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Ch

 8.2. Size:911K  samsung
 sfh9240.pdf

SFH9244 SFH9244

Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -11 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V Lower RDS(ON) : 0.344 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

 9.1. Size:545K  fairchild semi
 sfh9250l.pdf

SFH9244 SFH9244

Advanced Power MOSFETSFH9250LFEATURESBVDSS = -200 V Logic-Level Gate DriveRDS(on) = 0.23 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = -19.5 A Lower Input Capacitances Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current : 10uA (Max.) @ VDS=-200V Lower RDS(ON) : 0.175 (Typ.)1231.Gate 2. D

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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