DMG9N65CTI Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMG9N65CTI  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 22 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 29 nS

Cossⓘ - Capacitancia de salida: 122 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.3 Ohm

Encapsulados: TO-220F

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DMG9N65CTI datasheet

 ..1. Size:407K  diodes
 dmg9n65cti.pdf pdf_icon

DMG9N65CTI

DMG9N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance V(BR)DSS RDS(ON) Package TC = +25 C High BVDss Rating for Power Application 650V 1.3 @ VGS = 10V ITO-220AB 9.0A Low Input/Output Leakage Lead-Free Finish; RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description

 ..2. Size:252K  inchange semiconductor
 dmg9n65cti.pdf pdf_icon

DMG9N65CTI

isc N-Channel MOSFET Transistor DMG9N65CTI FEATURES Drain Current I = 9A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 1.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 5.1. Size:226K  diodes
 dmg9n65ct.pdf pdf_icon

DMG9N65CTI

DMG9N65CT Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(ON) Package High BVDss rating for Power Application TC = +25 C Low Input/Output Leakage 650V 1.3 @ VGS = 10V TO-220AB 9.0 A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descripti

 5.2. Size:261K  inchange semiconductor
 dmg9n65ct.pdf pdf_icon

DMG9N65CTI

isc N-Channel MOSFET Transistor DMG9N65CT FEATURES Drain Current I = 9A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 1.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

MOSTRAR MÁS

Otros transistores... DMG6601LVT, DMG6602SVTQ, DMG7401SFG, DMG7408SFG, DMG7410SFG, DMG7430LFG, DMG7702SFG, DMG9N65CT, IRF1407, DMGD7N45SSD, DMHC10H170SFJ, DMHC3025LSD, DMHC4035LSD, DMJ7N70SK3, DMN1019UFDE, DMN1019USN, DMN1019UVT