DMG9N65CTI
MOSFET. Datasheet pdf. Equivalent
Type Designator: DMG9N65CTI
Marking Code: 9N65CTI
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 22
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 39
nC
trⓘ - Rise Time: 29
nS
Cossⓘ -
Output Capacitance: 122
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3
Ohm
Package:
TO-220F
DMG9N65CTI
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMG9N65CTI
Datasheet (PDF)
..1. Size:407K diodes
dmg9n65cti.pdf
DMG9N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance V(BR)DSS RDS(ON) Package TC = +25C High BVDss Rating for Power Application 650V 1.3 @ VGS = 10V ITO-220AB 9.0A Low Input/Output Leakage Lead-Free Finish; RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description
..2. Size:252K inchange semiconductor
dmg9n65cti.pdf
isc N-Channel MOSFET Transistor DMG9N65CTIFEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
5.1. Size:226K diodes
dmg9n65ct.pdf
DMG9N65CT GreenN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(ON) Package High BVDss rating for Power Application TC = +25C Low Input/Output Leakage 650V 1.3 @ VGS = 10V TO-220AB 9.0 A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descripti
5.2. Size:261K inchange semiconductor
dmg9n65ct.pdf
isc N-Channel MOSFET Transistor DMG9N65CTFEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
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