DMN2005UFG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMN2005UFG
   Código: N05
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.05 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 18.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 V
   Qgⓘ - Carga de la puerta: 68.8 nC
   trⓘ - Tiempo de subida: 25.7 nS
   Cossⓘ - Capacitancia de salida: 546 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0046 Ohm
   Paquete / Cubierta: POWERDI3333-8

Búsqueda de reemplazo de MOSFET DMN2005UFG

DMN2005UFG Datasheet (PDF)

..1. Size:334K diodes
dmn2005ufg.pdf

DMN2005UFG20V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max TA = 25C (t

7.1. Size:162K diodes
dmn2005lpk.pdf

DMN2005LPKN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: DFN1006-3 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminal Connections: S

7.2. Size:239K diodes
dmn2005k.pdf

DMN2005KN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-23 Very Low Gate Threshold Voltage, 0.9V Max. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020C Low Input/Output Leakage

7.3. Size:178K diodes
dmn2005dlp4k.pdf

DMN2005DLP4KDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: DFN1310H4-6 Very Low Gate Threshold Voltage, 0.9V Max. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed

7.4. Size:166K diodes
dmn2005lp4k.pdf

DMN2005LP4KN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: DFN1006H4-3 Very Low Gate Threshold Voltage, 0.9V Max. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Term

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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