All MOSFET. DMN2005UFG Datasheet

 

DMN2005UFG MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMN2005UFG
   Marking Code: N05
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.05 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 18.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 68.8 nC
   trⓘ - Rise Time: 25.7 nS
   Cossⓘ - Output Capacitance: 546 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
   Package: POWERDI3333-8

 DMN2005UFG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMN2005UFG Datasheet (PDF)

 ..1. Size:334K  diodes
 dmn2005ufg.pdf

DMN2005UFG DMN2005UFG

DMN2005UFG20V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max TA = 25C (t

 7.1. Size:162K  diodes
 dmn2005lpk.pdf

DMN2005UFG DMN2005UFG

DMN2005LPKN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: DFN1006-3 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminal Connections: S

 7.2. Size:239K  diodes
 dmn2005k.pdf

DMN2005UFG DMN2005UFG

DMN2005KN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-23 Very Low Gate Threshold Voltage, 0.9V Max. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020C Low Input/Output Leakage

 7.3. Size:178K  diodes
 dmn2005dlp4k.pdf

DMN2005UFG DMN2005UFG

DMN2005DLP4KDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: DFN1310H4-6 Very Low Gate Threshold Voltage, 0.9V Max. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed

 7.4. Size:166K  diodes
 dmn2005lp4k.pdf

DMN2005UFG DMN2005UFG

DMN2005LP4KN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: DFN1006H4-3 Very Low Gate Threshold Voltage, 0.9V Max. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Term

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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