DMN2320UFB4 Todos los transistores

 

DMN2320UFB4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMN2320UFB4
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.52 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6.9 nS
   Cossⓘ - Capacitancia de salida: 12 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.32 Ohm
   Paquete / Cubierta: X2-DFN1006-3

 Búsqueda de reemplazo de MOSFET DMN2320UFB4

 

DMN2320UFB4 Datasheet (PDF)

 ..1. Size:189K  diodes
dmn2320ufb4.pdf

DMN2320UFB4
DMN2320UFB4

DMN2320UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Footprint of just 0.6mm2 thirteen times smaller than SOT23 ID max V(BR)DSS RDS(on) 0.4mm profile ideal for low profile applications TA = +25C Low Gate Threshold Voltage 320m @ VGS= 4.5V 1.0A Fast Switching Speed 20V 500m @ VGS= 2.5V 0.65A Totally Le

 9.1. Size:165K  diodes
dmn2300ufb4.pdf

DMN2320UFB4
DMN2320UFB4

A Product Line ofDiodes IncorporatedDMN2300UFB420V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Footprint of just 0.6mm2 thirteen times smaller than SOT23 ID V(BR)DSS RDS(ON) TA = +25C 0.4mm profile ideal for low profile applications (Note 5) Low Gate Threshold Voltage 175m @ VGS = 4.5V 1.30A Fast Switching Speed 240m @ VGS =

 9.2. Size:275K  diodes
dmn2300ufd.pdf

DMN2320UFB4
DMN2320UFB4

A Product Line ofDiodes IncorporatedDMN2300UFD20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage ID max Fast Switching Speed V(BR)DSS RDS(on) Max TA = 25C (Notes 4) Lead Free, RoHS Compliant (Note 1) 200m @ VGS = 4.5V 1.73A Halogen and Antimony Free. "Green" Device (Note 2) 260m @ VGS = 2.5V

 9.3. Size:225K  diodes
dmn2300ufl4.pdf

DMN2320UFB4
DMN2320UFB4

DMN2300UFL4 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Footprint of Just 1.3 mm2 TA = +25C V(BR)DSS Max RDS(on) Ultra Low Profile Package - 0.4mm Profile (Note 6) On Resistance

 9.4. Size:151K  diodes
dmn2300u.pdf

DMN2320UFB4
DMN2320UFB4

A Product Line ofDiodes IncorporatedDMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary Features and Benefits On resistance

 9.5. Size:132K  tysemi
dmn2300u.pdf

DMN2320UFB4
DMN2320UFB4

Product specification DMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary Features and Benefits On resistance

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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