All MOSFET. DMN2320UFB4 Datasheet

 

DMN2320UFB4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMN2320UFB4
   Marking Code: ND
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.95 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.89 nC
   trⓘ - Rise Time: 6.9 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
   Package: X2-DFN1006-3

 DMN2320UFB4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMN2320UFB4 Datasheet (PDF)

 ..1. Size:189K  diodes
dmn2320ufb4.pdf

DMN2320UFB4
DMN2320UFB4

DMN2320UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Footprint of just 0.6mm2 thirteen times smaller than SOT23 ID max V(BR)DSS RDS(on) 0.4mm profile ideal for low profile applications TA = +25C Low Gate Threshold Voltage 320m @ VGS= 4.5V 1.0A Fast Switching Speed 20V 500m @ VGS= 2.5V 0.65A Totally Le

 9.1. Size:165K  diodes
dmn2300ufb4.pdf

DMN2320UFB4
DMN2320UFB4

A Product Line ofDiodes IncorporatedDMN2300UFB420V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Footprint of just 0.6mm2 thirteen times smaller than SOT23 ID V(BR)DSS RDS(ON) TA = +25C 0.4mm profile ideal for low profile applications (Note 5) Low Gate Threshold Voltage 175m @ VGS = 4.5V 1.30A Fast Switching Speed 240m @ VGS =

 9.2. Size:275K  diodes
dmn2300ufd.pdf

DMN2320UFB4
DMN2320UFB4

A Product Line ofDiodes IncorporatedDMN2300UFD20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage ID max Fast Switching Speed V(BR)DSS RDS(on) Max TA = 25C (Notes 4) Lead Free, RoHS Compliant (Note 1) 200m @ VGS = 4.5V 1.73A Halogen and Antimony Free. "Green" Device (Note 2) 260m @ VGS = 2.5V

 9.3. Size:225K  diodes
dmn2300ufl4.pdf

DMN2320UFB4
DMN2320UFB4

DMN2300UFL4 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Footprint of Just 1.3 mm2 TA = +25C V(BR)DSS Max RDS(on) Ultra Low Profile Package - 0.4mm Profile (Note 6) On Resistance

 9.4. Size:151K  diodes
dmn2300u.pdf

DMN2320UFB4
DMN2320UFB4

A Product Line ofDiodes IncorporatedDMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary Features and Benefits On resistance

 9.5. Size:132K  tysemi
dmn2300u.pdf

DMN2320UFB4
DMN2320UFB4

Product specification DMN2300U 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary Features and Benefits On resistance

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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