DMN3035LWN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMN3035LWN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.77 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 3.3 nS
   Cossⓘ - Capacitancia de salida: 57 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: V-DFN3020-8

Búsqueda de reemplazo de MOSFET DMN3035LWN

DMN3035LWN Datasheet (PDF)

..1. Size:545K diodes
dmn3035lwn.pdf

DMN3035LWN 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX V(BR)DSS RDS(ON) MAX TA = +25C Low Input Capacitance 35m @ VGS = 10V 5.5A Fast Switching Speed 30V 45m @ VGS = 4.5V 4.9A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descriptio

8.1. Size:153K diodes
dmn3033lsd.pdf

DMN3033LSDDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Dual N-Channel MOSFET Case: SOP-8L Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 22m @ VGS = 10V Moisture Sensitivity: Level 1

8.2. Size:321K diodes
dmn3032le.pdf

DMN3032LE30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-ResistanceV(BR)DSS RDS(on) max TA = +25C Low Input Capacitance 29m @ VGS = 10V 5.6A Fast Switching Speed 30V 35m @ VGS = 4.5V 4.8A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre

8.3. Size:272K diodes
dmn3030lfg.pdf

DMN3030LFGGreenN-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) PackageTA = +25C Small form factor thermally efficient package enables higher 18m @ VGS = 10V POWERDI 8.6A density end products 30V 3333-8 27m @ VGS = 4.5V 5.5A Occupies just 33% of the boa

8.4. Size:179K diodes
dmn3031lss.pdf

DMN3031LSSSINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SO-8 18.5m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 31m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020D

8.5. Size:397K diodes
dmn3033lsnq.pdf

DMN3033LSNQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Gate Charge ID BVDSS RDS(on) max Low RDS(ON) TA = +25C Low Input/Output Leakage 6A 30m @ VGS = 10V 30V 40m @ VGS = 4.5V 4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standa

8.6. Size:147K diodes
dmn3033ldm.pdf

DMN3033LDMN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low Gate Charge Case: SOT-26 Low RDS(ON): Case Material - Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 33 m @VGS = 10V Moisture Sensitivity: Level 1 per J-STD-020D 40 m @VGS

8.7. Size:130K diodes
dmn3033lsn.pdf

DMN3033LSNN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low Gate Charge Case: SC-59 Low RDS(ON): Case Material - Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 30 m @VGS = 10V Moisture Sensitivity: Level 1 per J-STD-020 40 m @VGS =

8.8. Size:573K diodes
dmn3032lfdb.pdf

DMN3032LFDB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max BVDSS RDS(ON) Max Low Input Capacitance TA = +25C Fast Switching Speed 6.2A 30m @ VGS = 10V Low Input/Output Leakage 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 42m @ VGS = 4.5V 5.2A Halogen and Antimony Free

8.9. Size:177K diodes
dmn3030lss.pdf

DMN3030LSSSINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SO-8 18m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 30m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020D

8.10. Size:75K tysemi
dmn3033lsn.pdf

Product specificationDMN3033LSNN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low Gate Charge Case: SC-59 Low RDS(ON): Case Material - Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 30 m @VGS = 10V Moisture Sensitivity: Level 1 per J-STD-020 40 m @VGS = 4.5V Terminals: Finish Matte

8.11. Size:836K cn vbsemi
dmn3033lsn.pdf

DMN3033LSNwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: