DMN3035LWN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMN3035LWN
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.77 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.3 nS
Cossⓘ - Capacitancia de salida: 57 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
Paquete / Cubierta: V-DFN3020-8
Búsqueda de reemplazo de DMN3035LWN MOSFET
DMN3035LWN Datasheet (PDF)
dmn3035lwn.pdf

DMN3035LWN 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX V(BR)DSS RDS(ON) MAX TA = +25C Low Input Capacitance 35m @ VGS = 10V 5.5A Fast Switching Speed 30V 45m @ VGS = 4.5V 4.9A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descriptio
dmn3033lsd.pdf

DMN3033LSDDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Dual N-Channel MOSFET Case: SOP-8L Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 22m @ VGS = 10V Moisture Sensitivity: Level 1
dmn3032le.pdf

DMN3032LE30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-ResistanceV(BR)DSS RDS(on) max TA = +25C Low Input Capacitance 29m @ VGS = 10V 5.6A Fast Switching Speed 30V 35m @ VGS = 4.5V 4.8A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre
dmn3030lfg.pdf

DMN3030LFGGreenN-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) PackageTA = +25C Small form factor thermally efficient package enables higher 18m @ VGS = 10V POWERDI 8.6A density end products 30V 3333-8 27m @ VGS = 4.5V 5.5A Occupies just 33% of the boa
Otros transistores... DMN3024SFG , DMN3025LFG , DMN3025LSS , DMN3026LVT , DMN3029LFG , DMN3030LFG , DMN3032LE , DMN3033LSNQ , AON7506 , DMN3042L , DMN3050S-7 , DMN3053L , DMN3065LW , DMN3067LW , DMN3070SSN , DMN30H14DLY , DMN30H4D0L .
History: S-LP3407LT1G | HGA155N15S | PE5A1BA | TPV65R160C | FTK4015D | 2SK890 | SSM5N05FU
History: S-LP3407LT1G | HGA155N15S | PE5A1BA | TPV65R160C | FTK4015D | 2SK890 | SSM5N05FU



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