DMN3035LWN - описание и поиск аналогов

 ..1. Size:545K  diodes
 dmn3035lwn.pdf 

DMN3035LWN 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX V(BR)DSS RDS(ON) MAX TA = +25 C Low Input Capacitance 35m @ VGS = 10V 5.5A Fast Switching Speed 30V 45m @ VGS = 4.5V 4.9A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descriptio

 8.1. Size:153K  diodes
 dmn3033lsd.pdf 

DMN3033LSD DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Dual N-Channel MOSFET Case SOP-8L Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 22m @ VGS = 10V Moisture Sensitivity Level 1

 8.2. Size:321K  diodes
 dmn3032le.pdf 

DMN3032LE 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance V(BR)DSS RDS(on) max TA = +25 C Low Input Capacitance 29m @ VGS = 10V 5.6A Fast Switching Speed 30V 35m @ VGS = 4.5V 4.8A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre

 8.3. Size:272K  diodes
 dmn3030lfg.pdf 

DMN3030LFG Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) Package TA = +25 C Small form factor thermally efficient package enables higher 18m @ VGS = 10V POWERDI 8.6A density end products 30V 3333-8 27m @ VGS = 4.5V 5.5A Occupies just 33% of the boa

 8.4. Size:179K  diodes
 dmn3031lss.pdf 

DMN3031LSS SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SO-8 18.5m @ VGS = 10V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 31m @ VGS = 4.5V Moisture Sensitivity Level 1 per J-STD-020D

 8.5. Size:397K  diodes
 dmn3033lsnq.pdf 

DMN3033LSNQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Gate Charge ID BVDSS RDS(on) max Low RDS(ON) TA = +25 C Low Input/Output Leakage 6A 30m @ VGS = 10V 30V 40m @ VGS = 4.5V 4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standa

 8.6. Size:147K  diodes
 dmn3033ldm.pdf 

DMN3033LDM N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low Gate Charge Case SOT-26 Low RDS(ON) Case Material - Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 33 m @VGS = 10V Moisture Sensitivity Level 1 per J-STD-020D 40 m @VGS

 8.7. Size:130K  diodes
 dmn3033lsn.pdf 

DMN3033LSN N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low Gate Charge Case SC-59 Low RDS(ON) Case Material - Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 30 m @VGS = 10V Moisture Sensitivity Level 1 per J-STD-020 40 m @VGS =

 8.8. Size:573K  diodes
 dmn3032lfdb.pdf 

DMN3032LFDB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max BVDSS RDS(ON) Max Low Input Capacitance TA = +25 C Fast Switching Speed 6.2A 30m @ VGS = 10V Low Input/Output Leakage 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 42m @ VGS = 4.5V 5.2A Halogen and Antimony Free

 8.9. Size:177K  diodes
 dmn3030lss.pdf 

 8.10. Size:75K  tysemi
 dmn3033lsn.pdf 

Product specification DMN3033LSN N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low Gate Charge Case SC-59 Low RDS(ON) Case Material - Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 30 m @VGS = 10V Moisture Sensitivity Level 1 per J-STD-020 40 m @VGS = 4.5V Terminals Finish Matte

 8.11. Size:836K  cn vbsemi
 dmn3033lsn.pdf 

DMN3033LSN www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)