All MOSFET. DMN3035LWN Datasheet

 

DMN3035LWN Datasheet and Replacement


   Type Designator: DMN3035LWN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.77 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.3 nS
   Cossⓘ - Output Capacitance: 57 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: V-DFN3020-8
 

 DMN3035LWN substitution

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DMN3035LWN Datasheet (PDF)

 ..1. Size:545K  diodes
dmn3035lwn.pdf pdf_icon

DMN3035LWN

DMN3035LWN 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX V(BR)DSS RDS(ON) MAX TA = +25C Low Input Capacitance 35m @ VGS = 10V 5.5A Fast Switching Speed 30V 45m @ VGS = 4.5V 4.9A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descriptio

 8.1. Size:153K  diodes
dmn3033lsd.pdf pdf_icon

DMN3035LWN

DMN3033LSDDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Dual N-Channel MOSFET Case: SOP-8L Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 22m @ VGS = 10V Moisture Sensitivity: Level 1

 8.2. Size:321K  diodes
dmn3032le.pdf pdf_icon

DMN3035LWN

DMN3032LE30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-ResistanceV(BR)DSS RDS(on) max TA = +25C Low Input Capacitance 29m @ VGS = 10V 5.6A Fast Switching Speed 30V 35m @ VGS = 4.5V 4.8A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre

 8.3. Size:272K  diodes
dmn3030lfg.pdf pdf_icon

DMN3035LWN

DMN3030LFGGreenN-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) PackageTA = +25C Small form factor thermally efficient package enables higher 18m @ VGS = 10V POWERDI 8.6A density end products 30V 3333-8 27m @ VGS = 4.5V 5.5A Occupies just 33% of the boa

Datasheet: DMN3024SFG , DMN3025LFG , DMN3025LSS , DMN3026LVT , DMN3029LFG , DMN3030LFG , DMN3032LE , DMN3033LSNQ , AON7506 , DMN3042L , DMN3050S-7 , DMN3053L , DMN3065LW , DMN3067LW , DMN3070SSN , DMN30H14DLY , DMN30H4D0L .

History: FQD2N50TF | IPB34CN10N

Keywords - DMN3035LWN MOSFET datasheet

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