DMN53D0U Todos los transistores

 ..1. Size:333K  diodes
 dmn53d0u.pdf

DMN53D0U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits N-Channel MOSFET ID V(BR)DSS RDS(ON) Low On-Resistance TA = +25 C 2 @ VGS = 5V 300 mA Very Low Gate Threshold Voltage 50V 2.5 @ VGS = 2.5V 200 mA Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totall

 7.1. Size:237K  diodes
 dmn53d0lw.pdf

DMN53D0LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID N-Channel MOSFET V(BR)DSS RDS(ON) TA = +25 C Low On-Resistance Low Input Capacitance 2.0 @ VGS = 10V 360mA 50V Fast Switching Speed 3.0 @ VGS = 5V 250mA ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free.

 7.2. Size:248K  diodes
 dmn53d0lt.pdf

DMN53D0LT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits N-Channel MOSFET ID V(BR)DSS RDS(ON) TA = +25 C Low On-Resistance Very Low Gate Threshold Voltage 1.6 @ VGS = 10V 350 mA 50V Low Input Capacitance 2.5 @ VGS = 4.5V 200 mA Fast Switching Speed Low Input/ Output Leakage Ultra-Small Surface

 7.3. Size:328K  diodes
 dmn53d0l.pdf

 7.4. Size:256K  diodes
 dmn53d0lv.pdf

DMN53D0LV DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits Dual N-Channel MOSFET ID V(BR)DSS RDS(ON) Low On-Resistance TA = +25 C Very Low Gate Threshold Voltage 1.6 @ VGS = 10V 350 mA 50V Low Input Capacitance 2.5 @ VGS = 4.5V 200 mA Fast Switching Speed Low Input/ Output Leakage Ultra-Sm

 7.5. Size:430K  diodes
 dmn53d0lq.pdf

DMN53D0LQ N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits ID Low On-Resistance V(BR)DSS RDS(ON) TA = +25 C Very Low Gate Threshold Voltage Low Input Capacitance 1.6 @ VGS = 10V 500 mA 50V Fast Switching Speed 2.5 @ VGS = 4.5V 200 mA Low Input/Output Leakage ESD Protected to 2KV Totally Lead-Fre

 7.6. Size:258K  diodes
 dmn53d0ldw.pdf

DMN53D0LDW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features Dual N-Channel MOSFET ID V(BR)DSS RDS(ON) TA = +25 C Low On-Resistance Low Input Capacitance 1.6 @ VGS = 10V 360mA 50V Fast Switching Speed 2.5 @ VGS = 4.5V 250mA Small Surface Mount Package ESD protected to 2KV Description Totally Lead-Free &