DMN53D0U Specs and Replacement
Type Designator: DMN53D0U
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.8 nS
Cossⓘ - Output Capacitance: 8.4 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: SOT-23
DMN53D0U substitution
- MOSFET ⓘ Cross-Reference Search
DMN53D0U datasheet
dmn53d0u.pdf
DMN53D0U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits N-Channel MOSFET ID V(BR)DSS RDS(ON) Low On-Resistance TA = +25 C 2 @ VGS = 5V 300 mA Very Low Gate Threshold Voltage 50V 2.5 @ VGS = 2.5V 200 mA Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totall... See More ⇒
dmn53d0lw.pdf
DMN53D0LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID N-Channel MOSFET V(BR)DSS RDS(ON) TA = +25 C Low On-Resistance Low Input Capacitance 2.0 @ VGS = 10V 360mA 50V Fast Switching Speed 3.0 @ VGS = 5V 250mA ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. ... See More ⇒
dmn53d0lt.pdf
DMN53D0LT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits N-Channel MOSFET ID V(BR)DSS RDS(ON) TA = +25 C Low On-Resistance Very Low Gate Threshold Voltage 1.6 @ VGS = 10V 350 mA 50V Low Input Capacitance 2.5 @ VGS = 4.5V 200 mA Fast Switching Speed Low Input/ Output Leakage Ultra-Small Surface ... See More ⇒
Detailed specifications: DMN4026SK3, DMN4026SSD, DMN4060SVT-7, DMN53D0L, DMN53D0LDW, DMN53D0LT, DMN53D0LV, DMN53D0LW, IRF1405, DMN5L06-7, DMN5L06DMKQ, DMN5L06T-7, DMN5L06W-7, DMN6013LFG, DMN6040SFDE, DMN6040SK3, DMN6040SSD
Keywords - DMN53D0U MOSFET specs
DMN53D0U cross reference
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DMN53D0U replacement
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