All MOSFET. DMN53D0U Datasheet

 

DMN53D0U MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMN53D0U
   Marking Code: 53D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 0.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.6 nC
   trⓘ - Rise Time: 2.8 nS
   Cossⓘ - Output Capacitance: 8.4 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: SOT-23

 DMN53D0U Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMN53D0U Datasheet (PDF)

 ..1. Size:333K  diodes
 dmn53d0u.pdf

DMN53D0U DMN53D0U

DMN53D0UN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits N-Channel MOSFETID V(BR)DSS RDS(ON) Low On-ResistanceTA = +25C 2 @ VGS = 5V 300 mA Very Low Gate Threshold Voltage 50V 2.5 @ VGS = 2.5V 200 mA Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totall

 7.1. Size:237K  diodes
 dmn53d0lw.pdf

DMN53D0U DMN53D0U

DMN53D0LWN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID N-Channel MOSFETV(BR)DSS RDS(ON) TA = +25C Low On-Resistance Low Input Capacitance 2.0 @ VGS = 10V 360mA 50V Fast Switching Speed 3.0 @ VGS = 5V 250mA ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free.

 7.2. Size:248K  diodes
 dmn53d0lt.pdf

DMN53D0U DMN53D0U

DMN53D0LTN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits N-Channel MOSFETID V(BR)DSS RDS(ON) TA = +25C Low On-Resistance Very Low Gate Threshold Voltage 1.6 @ VGS = 10V 350 mA 50V Low Input Capacitance 2.5 @ VGS = 4.5V 200 mA Fast Switching Speed Low Input/ Output Leakage Ultra-Small Surface

 7.3. Size:328K  diodes
 dmn53d0l.pdf

DMN53D0U DMN53D0U

DMN53D0LN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits ID N-Channel MOSFETV(BR)DSS RDS(ON) TA = +25C Low On-Resistance Very Low Gate Threshold Voltage 1.6 @ VGS = 10V 500 mA 50V Low Input Capacitance 2.5 @ VGS = 4.5V 200 mA Fast Switching Speed Low Input/Output Leakage ESD Protected to 2KV

 7.4. Size:256K  diodes
 dmn53d0lv.pdf

DMN53D0U DMN53D0U

DMN53D0LVDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits Dual N-Channel MOSFETID V(BR)DSS RDS(ON) Low On-ResistanceTA = +25C Very Low Gate Threshold Voltage 1.6 @ VGS = 10V 350 mA 50V Low Input Capacitance 2.5 @ VGS = 4.5V 200 mA Fast Switching Speed Low Input/ Output Leakage Ultra-Sm

 7.5. Size:430K  diodes
 dmn53d0lq.pdf

DMN53D0U DMN53D0U

DMN53D0LQ N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features and Benefits ID Low On-Resistance V(BR)DSS RDS(ON) TA = +25C Very Low Gate Threshold Voltage Low Input Capacitance 1.6 @ VGS = 10V 500 mA 50V Fast Switching Speed 2.5 @ VGS = 4.5V 200 mA Low Input/Output Leakage ESD Protected to 2KV Totally Lead-Fre

 7.6. Size:258K  diodes
 dmn53d0ldw.pdf

DMN53D0U DMN53D0U

DMN53D0LDWDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features Dual N-Channel MOSFETID V(BR)DSS RDS(ON) TA = +25C Low On-Resistance Low Input Capacitance 1.6 @ VGS = 10V 360mA 50V Fast Switching Speed 2.5 @ VGS = 4.5V 250mA Small Surface Mount Package ESD protected to 2KV Description Totally Lead-Free &

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IXFB100N50P

 

 
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