DMN6040SK3 Todos los transistores

 

DMN6040SK3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMN6040SK3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8.1 nS
   Cossⓘ - Capacitancia de salida: 57 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: TO-252

 Búsqueda de reemplazo de MOSFET DMN6040SK3

 

DMN6040SK3 Datasheet (PDF)

 ..1. Size:238K  diodes
dmn6040sk3.pdf

DMN6040SK3
DMN6040SK3

DMN6040SK360V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance V(BR)DSS RDS(on) max TC = +25C Low On-Resistance40m @ VGS = 10V 20A Fast Switching Speed 60V 50m @ VGS = 4.5V 16A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q1

 ..2. Size:265K  inchange semiconductor
dmn6040sk3.pdf

DMN6040SK3
DMN6040SK3

isc N-Channel MOSFET Transistor DMN6040SK3FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 40m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 0.1. Size:808K  cn vbsemi
dmn6040sk3-13.pdf

DMN6040SK3
DMN6040SK3

DMN6040SK3-13www.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwi

 6.1. Size:243K  diodes
dmn6040ssd.pdf

DMN6040SK3
DMN6040SK3

DMN6040SSD 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID Low On-Resistance V(BR)DSS RDS(on) max TA = +25C Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 40m @ VGS = 10V 5.0A Halogen and Antimony Free. Green Device (Note 3) 60V 4.4A Qualified to AEC

 6.2. Size:469K  diodes
dmn6040ssdq.pdf

DMN6040SK3
DMN6040SK3

DMN6040SSDQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID V(BR)DSS RDS(ON) Max Low On-Resistance TA = +25C Fast Switching Speed 40m @ VGS = 10V 5.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 60V Halogen and Antimony Free. Green Device (Note 3) 4.4A 55m @ VGS = 4.5V

 6.3. Size:504K  diodes
dmn6040svtq.pdf

DMN6040SK3
DMN6040SK3

DMN6040SVTQ 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) Test in Production ID V(BR)DSS RDS(ON) Max Low Input Capacitance TA = +25C Low On-Resistance 44m @ VGS = 10V 5.0A Fast Switching Speed 60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 4.3A 60m @ VGS = 4.5V

 6.4. Size:195K  diodes
dmn6040sfde.pdf

DMN6040SK3
DMN6040SK3

DMN6040SFDE60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID max V(BR)DSS RDS(ON) max Package 0.6mm profile ideal for low profile applications TA = +25C PCB footprint of 4mm2 38m @ VGS = 10V 6.5A U-DFN2020-6 Low On-Resistance 60V Type E 47m @ VGS = 4.5V 5.

 6.5. Size:172K  diodes
dmn6040sss.pdf

DMN6040SK3
DMN6040SK3

DMN6040SSSN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25C Fast Switching Speed 40m @ VGS = 10V 5.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) 60V Qualified to AEC-Q101 standard

 6.6. Size:199K  diodes
dmn6040svt.pdf

DMN6040SK3
DMN6040SK3

DMN6040SVT60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) max Low Input Capacitance TA = 25C Low On-Resistance Fast Switching Speed 44m @ VGS = 10V 5.0A 60V Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) 60m @ VGS = 4.5V 4.3A

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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