DMN6040SK3 MOSFET. Datasheet pdf. Equivalent
Type Designator: DMN6040SK3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 22.4 nC
trⓘ - Rise Time: 8.1 nS
Cossⓘ - Output Capacitance: 57 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO-252
DMN6040SK3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMN6040SK3 Datasheet (PDF)
dmn6040sk3.pdf
DMN6040SK360V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance V(BR)DSS RDS(on) max TC = +25C Low On-Resistance40m @ VGS = 10V 20A Fast Switching Speed 60V 50m @ VGS = 4.5V 16A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q1
dmn6040sk3.pdf
isc N-Channel MOSFET Transistor DMN6040SK3FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 40m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
dmn6040sk3-13.pdf
DMN6040SK3-13www.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwi
dmn6040ssd.pdf
DMN6040SSD 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID Low On-Resistance V(BR)DSS RDS(on) max TA = +25C Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 40m @ VGS = 10V 5.0A Halogen and Antimony Free. Green Device (Note 3) 60V 4.4A Qualified to AEC
dmn6040ssdq.pdf
DMN6040SSDQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance ID V(BR)DSS RDS(ON) Max Low On-Resistance TA = +25C Fast Switching Speed 40m @ VGS = 10V 5.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 60V Halogen and Antimony Free. Green Device (Note 3) 4.4A 55m @ VGS = 4.5V
dmn6040svtq.pdf
DMN6040SVTQ 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) Test in Production ID V(BR)DSS RDS(ON) Max Low Input Capacitance TA = +25C Low On-Resistance 44m @ VGS = 10V 5.0A Fast Switching Speed 60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 4.3A 60m @ VGS = 4.5V
dmn6040sfde.pdf
DMN6040SFDE60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID max V(BR)DSS RDS(ON) max Package 0.6mm profile ideal for low profile applications TA = +25C PCB footprint of 4mm2 38m @ VGS = 10V 6.5A U-DFN2020-6 Low On-Resistance 60V Type E 47m @ VGS = 4.5V 5.
dmn6040sss.pdf
DMN6040SSSN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = 25C Fast Switching Speed 40m @ VGS = 10V 5.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) 60V Qualified to AEC-Q101 standard
dmn6040svt.pdf
DMN6040SVT60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) max Low Input Capacitance TA = 25C Low On-Resistance Fast Switching Speed 44m @ VGS = 10V 5.0A 60V Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) 60m @ VGS = 4.5V 4.3A
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
