DMS3016SSS Todos los transistores

 

DMS3016SSS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMS3016SSS

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.54 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 9.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.73 nS

Cossⓘ - Capacitancia de salida: 158 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm

Encapsulados: SO-8

 Búsqueda de reemplazo de DMS3016SSS MOSFET

- Selecciónⓘ de transistores por parámetros

 

DMS3016SSS datasheet

 ..1. Size:161K  diodes
dms3016sss.pdf pdf_icon

DMS3016SSS

DMS3016SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data DIOFET utilizes a unique patented process to monolithically Case SO-8 integrate a MOSFET and a Schottky in a single die to deliver Case Material Molded Plastic, Green Molding Compound. Low RDS(ON) - minimizes conduction losses UL Flammability Classification Rating 94V-0

 0.1. Size:157K  diodes
dms3016sssa.pdf pdf_icon

DMS3016SSS

DMS3016SSSA N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data DIOFET utilizes a unique patented process to monolithically Case SO-8 integrate a MOSFET and a Schottky in a single die to deliver Case Material Molded Plastic, Green Molding Compound. Low RDS(ON) - minimizes conduction losses UL Flammability Classification Rating 94V-0

 7.1. Size:555K  fairchild semi
fdms3016dc.pdf pdf_icon

DMS3016SSS

July 2013 FDMS3016DC N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 49 A, 6.0 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 6.0 m at VGS = 10 V, ID = 12 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 9.0 m at VGS

 8.1. Size:192K  diodes
dms3012sfg.pdf pdf_icon

DMS3016SSS

DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary Features DIOFET utilizes a unique patented process to monolithically ID V(BR)DSS RDS(ON) Package integrate a MOSFET and a Schottky in a single die to deliver TA = +25 C Low RDS(ON) minimize conduction losses 10m @ VGS = 10V 12A Low VSD reducing the losses due to bo

Otros transistores... DMP6250SE , DMS05N60 , DMS2085LSD , DMS2095LFDB , DMS3012SFG , DMS3014SFG , DMS3014SSS , DMS3015SSS , 8205A , DMS3017SSD , DMS3019SSD , DMT3008LFDF , DMT5015LFDF , DMT6008LFG , DMT6010LFG , DMT6016LFDF , DMT6016LPS .

History: AP3N1R7MT | 2SK1669 | HM4441 | FDB045AN08A0-F085 | BSZ0908ND | JMSL0315ARD | SMG2305

 

 

 


History: AP3N1R7MT | 2SK1669 | HM4441 | FDB045AN08A0-F085 | BSZ0908ND | JMSL0315ARD | SMG2305

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10

 

 

 

Popular searches

2sa1941 | 2sc485 | 2sd287 | 2sd438 | a1492 | hy4008 | ncep039n10m | 20n50

 

 

↑ Back to Top
.