DMS3016SSS Datasheet. Specs and Replacement
Type Designator: DMS3016SSS 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 9.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.73 nS
Cossⓘ - Output Capacitance: 158 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: SO-8
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DMS3016SSS substitution
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DMS3016SSS datasheet
dms3016sss.pdf
DMS3016SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data DIOFET utilizes a unique patented process to monolithically Case SO-8 integrate a MOSFET and a Schottky in a single die to deliver Case Material Molded Plastic, Green Molding Compound. Low RDS(ON) - minimizes conduction losses UL Flammability Classification Rating 94V-0 ... See More ⇒
dms3016sssa.pdf
DMS3016SSSA N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data DIOFET utilizes a unique patented process to monolithically Case SO-8 integrate a MOSFET and a Schottky in a single die to deliver Case Material Molded Plastic, Green Molding Compound. Low RDS(ON) - minimizes conduction losses UL Flammability Classification Rating 94V-0 ... See More ⇒
fdms3016dc.pdf
July 2013 FDMS3016DC N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 49 A, 6.0 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 6.0 m at VGS = 10 V, ID = 12 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 9.0 m at VGS... See More ⇒
dms3012sfg.pdf
DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary Features DIOFET utilizes a unique patented process to monolithically ID V(BR)DSS RDS(ON) Package integrate a MOSFET and a Schottky in a single die to deliver TA = +25 C Low RDS(ON) minimize conduction losses 10m @ VGS = 10V 12A Low VSD reducing the losses due to bo... See More ⇒
Detailed specifications: DMP6250SE, DMS05N60, DMS2085LSD, DMS2095LFDB, DMS3012SFG, DMS3014SFG, DMS3014SSS, DMS3015SSS, IRF9540, DMS3017SSD, DMS3019SSD, DMT3008LFDF, DMT5015LFDF, DMT6008LFG, DMT6010LFG, DMT6016LFDF, DMT6016LPS
Keywords - DMS3016SSS MOSFET specs
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