All MOSFET. DMS3016SSS Datasheet

 

DMS3016SSS Datasheet and Replacement


   Type Designator: DMS3016SSS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 9.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.73 nS
   Cossⓘ - Output Capacitance: 158 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: SO-8
 

 DMS3016SSS substitution

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DMS3016SSS Datasheet (PDF)

 ..1. Size:161K  diodes
dms3016sss.pdf pdf_icon

DMS3016SSS

DMS3016SSSN-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data DIOFET utilizes a unique patented process to monolithically Case: SO-8integrate a MOSFET and a Schottky in a single die to deliver: Case Material: Molded Plastic, Green Molding Compound. Low RDS(ON) - minimizes conduction losses UL Flammability Classification Rating 94V-0

 0.1. Size:157K  diodes
dms3016sssa.pdf pdf_icon

DMS3016SSS

DMS3016SSSAN-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data DIOFET utilizes a unique patented process to monolithically Case: SO-8integrate a MOSFET and a Schottky in a single die to deliver: Case Material: Molded Plastic, Green Molding Compound. Low RDS(ON) - minimizes conduction losses UL Flammability Classification Rating 94V-0

 7.1. Size:555K  fairchild semi
fdms3016dc.pdf pdf_icon

DMS3016SSS

July 2013FDMS3016DCN-Channel Dual CoolTM PowerTrench MOSFET 30 V, 49 A, 6.0 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 6.0 m at VGS = 10 V, ID = 12 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 9.0 m at VGS

 8.1. Size:192K  diodes
dms3012sfg.pdf pdf_icon

DMS3016SSS

DMS3012SFG30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary Features DIOFET utilizes a unique patented process to monolithically ID V(BR)DSS RDS(ON) Package integrate a MOSFET and a Schottky in a single die to deliver: TA = +25C Low RDS(ON) minimize conduction losses 10m @ VGS = 10V 12A Low VSD reducing the losses due to bo

Datasheet: DMP6250SE , DMS05N60 , DMS2085LSD , DMS2095LFDB , DMS3012SFG , DMS3014SFG , DMS3014SSS , DMS3015SSS , 2SK3878 , DMS3017SSD , DMS3019SSD , DMT3008LFDF , DMT5015LFDF , DMT6008LFG , DMT6010LFG , DMT6016LFDF , DMT6016LPS .

History: AP6679GP-A-HF | SM4382NAKP | AP60N03GP | UTT6NP10G-S08-R | SIA537EDJ | IRFU3707 | QM2N7002E3K1

Keywords - DMS3016SSS MOSFET datasheet

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