DMT8012LFG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMT8012LFG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 9.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.8 nS
Cossⓘ - Capacitancia de salida: 177 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
Paquete / Cubierta: POWERDI3333-8
Búsqueda de reemplazo de DMT8012LFG MOSFET
DMT8012LFG Datasheet (PDF)
dmt8012lfg.pdf

DMT8012LFGN-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Excellent Qgd x RDS(ON) Product (FOM) TC = +25C Advanced Technology for DC/DC converts 16m @ VGS = 10V 35A 80V Small form factor thermally efficient package enables higher 22m @ VGS =
dmt8012lk3.pdf

DMT8012LK3 Green80V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID max Low RDS(ON) ensures on state losses are minimized BVDSS RDS(ON) max TC = +25C High Conversion Efficiency Low Input Capacitance 17m @ VGS = 10V 44A Fast Switching Speed 80V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 22m @ VGS = 4.5V 38A Halogen a
fdmt800152dc.pdf

March 2015FDMT800152DCN-Channel Dual CoolTM PowerTrench MOSFET150 V, 72 A, 9.0 mFeatures General Description Max rDS(on) = 9.0 m at VGS = 10 V, ID = 13 AThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 6 V, ID = 11 A Semiconductors advanced PowerTrench process. Advanced Package and Silicon combination for low rDS(on) Advancements in bo
fdmt800150dc.pdf

February 2015FDMT800150DCN-Channel Dual CoolTM PowerTrench MOSFET150 V, 99 A, 6.5 mFeatures General Description Max rDS(on) = 6.5 m at VGS = 10 V, ID = 15 AThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 8.4 m at VGS = 6 V, ID = 13 A Semiconductors advanced PowerTrench process. Advanced Package and Silicon combination for low rDS(on) Advancements in
Otros transistores... DMS3019SSD , DMT3008LFDF , DMT5015LFDF , DMT6008LFG , DMT6010LFG , DMT6016LFDF , DMT6016LPS , DMT6016LSS , IRF4905 , DMTH8012LK3 , DN1509 , DN2450 , DN2470 , DN2530 , DN2535 , DN2540 , DN2625 .
History: BML6401 | HY4306B6 | IXFT12N100F | BRFL13N50 | 2SK1478 | CEF02N6G | 2SK65
History: BML6401 | HY4306B6 | IXFT12N100F | BRFL13N50 | 2SK1478 | CEF02N6G | 2SK65



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