All MOSFET. DMT8012LFG Datasheet

 

DMT8012LFG Datasheet and Replacement


   Type Designator: DMT8012LFG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.8 nS
   Cossⓘ - Output Capacitance: 177 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: POWERDI3333-8
 

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DMT8012LFG Datasheet (PDF)

 ..1. Size:267K  diodes
dmt8012lfg.pdf pdf_icon

DMT8012LFG

DMT8012LFGN-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Excellent Qgd x RDS(ON) Product (FOM) TC = +25C Advanced Technology for DC/DC converts 16m @ VGS = 10V 35A 80V Small form factor thermally efficient package enables higher 22m @ VGS =

 6.1. Size:502K  diodes
dmt8012lk3.pdf pdf_icon

DMT8012LFG

DMT8012LK3 Green80V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID max Low RDS(ON) ensures on state losses are minimized BVDSS RDS(ON) max TC = +25C High Conversion Efficiency Low Input Capacitance 17m @ VGS = 10V 44A Fast Switching Speed 80V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 22m @ VGS = 4.5V 38A Halogen a

 9.1. Size:480K  fairchild semi
fdmt800152dc.pdf pdf_icon

DMT8012LFG

March 2015FDMT800152DCN-Channel Dual CoolTM PowerTrench MOSFET150 V, 72 A, 9.0 mFeatures General Description Max rDS(on) = 9.0 m at VGS = 10 V, ID = 13 AThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 6 V, ID = 11 A Semiconductors advanced PowerTrench process. Advanced Package and Silicon combination for low rDS(on) Advancements in bo

 9.2. Size:364K  fairchild semi
fdmt800150dc.pdf pdf_icon

DMT8012LFG

February 2015FDMT800150DCN-Channel Dual CoolTM PowerTrench MOSFET150 V, 99 A, 6.5 mFeatures General Description Max rDS(on) = 6.5 m at VGS = 10 V, ID = 15 AThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 8.4 m at VGS = 6 V, ID = 13 A Semiconductors advanced PowerTrench process. Advanced Package and Silicon combination for low rDS(on) Advancements in

Datasheet: DMS3019SSD , DMT3008LFDF , DMT5015LFDF , DMT6008LFG , DMT6010LFG , DMT6016LFDF , DMT6016LPS , DMT6016LSS , IRF4905 , DMTH8012LK3 , DN1509 , DN2450 , DN2470 , DN2530 , DN2535 , DN2540 , DN2625 .

History: ELM16400EA | IXTT140N10P | SSF2341E | STD35NF3LLT4 | IPS105N03LG | 2SJ476-01L | FIR24N50APTG

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