DMT8012LFG Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: DMT8012LFG
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 9.5 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 3.8 ns
Cossⓘ - Выходная емкость: 177 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
Тип корпуса: POWERDI3333-8
- подбор MOSFET транзистора по параметрам
DMT8012LFG Datasheet (PDF)
dmt8012lfg.pdf

DMT8012LFGN-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Excellent Qgd x RDS(ON) Product (FOM) TC = +25C Advanced Technology for DC/DC converts 16m @ VGS = 10V 35A 80V Small form factor thermally efficient package enables higher 22m @ VGS =
dmt8012lk3.pdf

DMT8012LK3 Green80V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID max Low RDS(ON) ensures on state losses are minimized BVDSS RDS(ON) max TC = +25C High Conversion Efficiency Low Input Capacitance 17m @ VGS = 10V 44A Fast Switching Speed 80V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 22m @ VGS = 4.5V 38A Halogen a
fdmt800152dc.pdf

March 2015FDMT800152DCN-Channel Dual CoolTM PowerTrench MOSFET150 V, 72 A, 9.0 mFeatures General Description Max rDS(on) = 9.0 m at VGS = 10 V, ID = 13 AThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 6 V, ID = 11 A Semiconductors advanced PowerTrench process. Advanced Package and Silicon combination for low rDS(on) Advancements in bo
fdmt800150dc.pdf

February 2015FDMT800150DCN-Channel Dual CoolTM PowerTrench MOSFET150 V, 99 A, 6.5 mFeatures General Description Max rDS(on) = 6.5 m at VGS = 10 V, ID = 15 AThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 8.4 m at VGS = 6 V, ID = 13 A Semiconductors advanced PowerTrench process. Advanced Package and Silicon combination for low rDS(on) Advancements in
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: STD11NM60N-1 | HM60N06 | STW34NB20 | SD5002N | STU417L | STD35NF3LLT4 | 2SK2882
History: STD11NM60N-1 | HM60N06 | STW34NB20 | SD5002N | STU417L | STD35NF3LLT4 | 2SK2882



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