IPB048N15N5LF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPB048N15N5LF
Código: 048N15LF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 313 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.9 VQgⓘ - Carga de la puerta: 84 nC
trⓘ - Tiempo de subida: 48 nS
Cossⓘ - Capacitancia de salida: 1400 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0048 Ohm
Paquete / Cubierta: TO-263
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IPB048N15N5LF Datasheet (PDF)
ipb048n15n5lf.pdf
IPB048N15N5LFMOSFETDPAKOptiMOSTM 5 Linear FET, 150 VFeatures Ideal for hot-swap and e-fuse applications Very low on-resistance RDS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21Drain
ipb048n15n5lf.pdf
isc N-Channel MOSFET Transistor IPB048N15N5LFDESCRIPTIONDrain Current I = 120A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL ARAMETER
ipb048n15n5.pdf
IPB048N15N5MOSFETDPAKOptiMOS5 Power-Transistor, 150 VFeaturestab Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Very low reverse recovery charge (Qrr) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application1 Ideal for high-frequency switching and
ipb048n15n5.pdf
IPB048N15N5MOSFETDPAKOptiMOS5 Power-Transistor, 150 VFeaturestab Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Very low reverse recovery charge (Qrr) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application1 Ideal for high-frequency switching and
ipb048n15n5.pdf
Isc N-Channel MOSFET Transistor IPB048N15N5FEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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