IPB048N15N5LF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPB048N15N5LF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 313 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 48 nS
Cossⓘ - Capacitancia de salida: 1400 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0048 Ohm
Encapsulados: TO-263
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IPB048N15N5LF datasheet
ipb048n15n5lf.pdf
IPB048N15N5LF MOSFET D PAK OptiMOSTM 5 Linear FET, 150 V Features Ideal for hot-swap and e-fuse applications Very low on-resistance R DS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21 Drain
ipb048n15n5lf.pdf
isc N-Channel MOSFET Transistor IPB048N15N5LF DESCRIPTION Drain Current I = 120A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Designed for high current, high speed switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL ARAMETER
ipb048n15n5.pdf
IPB048N15N5 MOSFET D PAK OptiMOS 5 Power-Transistor, 150 V Features tab Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Very low reverse recovery charge (Qrr) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application 1 Ideal for high-frequency switching and
ipb048n15n5.pdf
IPB048N15N5 MOSFET D PAK OptiMOS 5 Power-Transistor, 150 V Features tab Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Very low reverse recovery charge (Qrr) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application 1 Ideal for high-frequency switching and
Otros transistores... 36N06 , 65N06 , FCP125N65S3 , FKI10300 , FMH08N80E , FQU10N20 , IPA180N10N3 , IPA60R120P7 , SI2302 , IPD031N06L3 , IPD033N06N , IPD034N06N3 , IPD036N04L , IPD038N06N3 , IPD046N08N5 , IPD048N06L3 , IPD050N10N5 .
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