IPB048N15N5LF PDF and Equivalents Search

 

IPB048N15N5LF Specs and Replacement


   Type Designator: IPB048N15N5LF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 313 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 1400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
   Package: TO-263
 

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IPB048N15N5LF datasheet

 ..1. Size:899K  infineon
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IPB048N15N5LF

IPB048N15N5LF MOSFET D PAK OptiMOSTM 5 Linear FET, 150 V Features Ideal for hot-swap and e-fuse applications Very low on-resistance R DS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21 Drain ... See More ⇒

 ..2. Size:229K  inchange semiconductor
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IPB048N15N5LF

isc N-Channel MOSFET Transistor IPB048N15N5LF DESCRIPTION Drain Current I = 120A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Designed for high current, high speed switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL ARAMETER ... See More ⇒

 3.1. Size:1005K  1
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IPB048N15N5LF

IPB048N15N5 MOSFET D PAK OptiMOS 5 Power-Transistor, 150 V Features tab Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Very low reverse recovery charge (Qrr) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application 1 Ideal for high-frequency switching and ... See More ⇒

 3.2. Size:1005K  infineon
ipb048n15n5.pdf pdf_icon

IPB048N15N5LF

IPB048N15N5 MOSFET D PAK OptiMOS 5 Power-Transistor, 150 V Features tab Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Very low reverse recovery charge (Qrr) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application 1 Ideal for high-frequency switching and ... See More ⇒

Detailed specifications: 36N06 , 65N06 , FCP125N65S3 , FKI10300 , FMH08N80E , FQU10N20 , IPA180N10N3 , IPA60R120P7 , SI2302 , IPD031N06L3 , IPD033N06N , IPD034N06N3 , IPD036N04L , IPD038N06N3 , IPD046N08N5 , IPD048N06L3 , IPD050N10N5 .

History: TMP10N60 | IPL60R180P6 | 2SK3873-01 | AGM15N10D | AGM1099E | AGM206A | AGM025N10C

Keywords - IPB048N15N5LF MOSFET specs

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