Справочник MOSFET. IPB048N15N5LF

 

IPB048N15N5LF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPB048N15N5LF
   Маркировка: 048N15LF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 313 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.9 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 84 nC
   trⓘ - Время нарастания: 48 ns
   Cossⓘ - Выходная емкость: 1400 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0048 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для IPB048N15N5LF

 

 

IPB048N15N5LF Datasheet (PDF)

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IPB048N15N5LF
IPB048N15N5LF

IPB048N15N5LFMOSFETDPAKOptiMOSTM 5 Linear FET, 150 VFeatures Ideal for hot-swap and e-fuse applications Very low on-resistance RDS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21Drain

 ..2. Size:229K  inchange semiconductor
ipb048n15n5lf.pdf

IPB048N15N5LF
IPB048N15N5LF

isc N-Channel MOSFET Transistor IPB048N15N5LFDESCRIPTIONDrain Current I = 120A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL ARAMETER

 3.1. Size:1005K  1
ipb048n15n5.pdf

IPB048N15N5LF
IPB048N15N5LF

IPB048N15N5MOSFETDPAKOptiMOS5 Power-Transistor, 150 VFeaturestab Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Very low reverse recovery charge (Qrr) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application1 Ideal for high-frequency switching and

 3.2. Size:1005K  infineon
ipb048n15n5.pdf

IPB048N15N5LF
IPB048N15N5LF

IPB048N15N5MOSFETDPAKOptiMOS5 Power-Transistor, 150 VFeaturestab Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Very low reverse recovery charge (Qrr) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application1 Ideal for high-frequency switching and

 3.3. Size:229K  inchange semiconductor
ipb048n15n5.pdf

IPB048N15N5LF
IPB048N15N5LF

Isc N-Channel MOSFET Transistor IPB048N15N5FEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

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History: IXTN550N055T2

 

 
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