IPB048N15N5LF. Аналоги и основные параметры
Наименование производителя: IPB048N15N5LF
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 313 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 48 ns
Cossⓘ - Выходная емкость: 1400 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0048 Ohm
Тип корпуса: TO-263
Аналог (замена) для IPB048N15N5LF
- подборⓘ MOSFET транзистора по параметрам
IPB048N15N5LF даташит
ipb048n15n5lf.pdf
IPB048N15N5LF MOSFET D PAK OptiMOSTM 5 Linear FET, 150 V Features Ideal for hot-swap and e-fuse applications Very low on-resistance R DS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21 Drain
ipb048n15n5lf.pdf
isc N-Channel MOSFET Transistor IPB048N15N5LF DESCRIPTION Drain Current I = 120A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Designed for high current, high speed switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL ARAMETER
ipb048n15n5.pdf
IPB048N15N5 MOSFET D PAK OptiMOS 5 Power-Transistor, 150 V Features tab Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Very low reverse recovery charge (Qrr) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application 1 Ideal for high-frequency switching and
ipb048n15n5.pdf
IPB048N15N5 MOSFET D PAK OptiMOS 5 Power-Transistor, 150 V Features tab Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Very low reverse recovery charge (Qrr) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application 1 Ideal for high-frequency switching and
Другие MOSFET... 36N06 , 65N06 , FCP125N65S3 , FKI10300 , FMH08N80E , FQU10N20 , IPA180N10N3 , IPA60R120P7 , SI2302 , IPD031N06L3 , IPD033N06N , IPD034N06N3 , IPD036N04L , IPD038N06N3 , IPD046N08N5 , IPD048N06L3 , IPD050N10N5 .
History: APT10040B2VR
History: APT10040B2VR
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