IPB048N15N5LF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: IPB048N15N5LF
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 313 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 48 ns
Cossⓘ - Выходная емкость: 1400 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0048 Ohm
Тип корпуса: TO-263
Аналог (замена) для IPB048N15N5LF
IPB048N15N5LF Datasheet (PDF)
ipb048n15n5lf.pdf

IPB048N15N5LFMOSFETDPAKOptiMOSTM 5 Linear FET, 150 VFeatures Ideal for hot-swap and e-fuse applications Very low on-resistance RDS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21Drain
ipb048n15n5lf.pdf

isc N-Channel MOSFET Transistor IPB048N15N5LFDESCRIPTIONDrain Current I = 120A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL ARAMETER
ipb048n15n5.pdf

IPB048N15N5MOSFETDPAKOptiMOS5 Power-Transistor, 150 VFeaturestab Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Very low reverse recovery charge (Qrr) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application1 Ideal for high-frequency switching and
ipb048n15n5.pdf

IPB048N15N5MOSFETDPAKOptiMOS5 Power-Transistor, 150 VFeaturestab Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Very low reverse recovery charge (Qrr) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application1 Ideal for high-frequency switching and
Другие MOSFET... 36N06 , 65N06 , FCP125N65S3 , FKI10300 , FMH08N80E , FQU10N20 , IPA180N10N3 , IPA60R120P7 , IRFZ46N , IPD031N06L3 , IPD033N06N , IPD034N06N3 , IPD036N04L , IPD038N06N3 , IPD046N08N5 , IPD048N06L3 , IPD050N10N5 .
History: STFI24NM60N | FHF630A | 2SK696 | TPC8122 | P3606BEA | SM7A23NSU
History: STFI24NM60N | FHF630A | 2SK696 | TPC8122 | P3606BEA | SM7A23NSU



Список транзисторов
Обновления
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