IPB048N15N5LF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPB048N15N5LF
Маркировка: 048N15LF
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 313 W
Предельно допустимое напряжение сток-исток |Uds|: 150 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4.9 V
Максимально допустимый постоянный ток стока |Id|: 120 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 84 nC
Время нарастания (tr): 48 ns
Выходная емкость (Cd): 1400 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0048 Ohm
Тип корпуса: TO-263
Аналог (замена) для IPB048N15N5LF
IPB048N15N5LF Datasheet (PDF)
ipb048n15n5lf.pdf
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IPB048N15N5LFMOSFETDPAKOptiMOSTM 5 Linear FET, 150 VFeatures Ideal for hot-swap and e-fuse applications Very low on-resistance RDS(on) Wide safe operating area SOA N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free according to IEC61249-2-21Drain
ipb048n15n5lf.pdf
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isc N-Channel MOSFET Transistor IPB048N15N5LFDESCRIPTIONDrain Current I = 120A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL ARAMETER
ipb048n15n5.pdf
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IPB048N15N5MOSFETDPAKOptiMOS5 Power-Transistor, 150 VFeaturestab Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Very low reverse recovery charge (Qrr) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application1 Ideal for high-frequency switching and
ipb048n15n5.pdf
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IPB048N15N5MOSFETDPAKOptiMOS5 Power-Transistor, 150 VFeaturestab Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Very low reverse recovery charge (Qrr) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application1 Ideal for high-frequency switching and
ipb048n15n5.pdf
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Isc N-Channel MOSFET Transistor IPB048N15N5FEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
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