IPD60R360P7 Todos los transistores

 

IPD60R360P7 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPD60R360P7

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 41 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 10 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm

Encapsulados: TO-252

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IPD60R360P7 datasheet

 ..1. Size:905K  infineon
 ipd60r360p7.pdf pdf_icon

IPD60R360P7

IPD60R360P7 MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFE

 ..2. Size:242K  inchange semiconductor
 ipd60r360p7.pdf pdf_icon

IPD60R360P7

isc N-Channel MOSFET Transistor IPD60R360P7,IIPD60R360P7 FEATURES Static drain-source on-resistance RDS(on) 0.36 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for hard and soft switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sourc

 0.1. Size:1100K  infineon
 ipd60r360p7s.pdf pdf_icon

IPD60R360P7

IPD60R360P7S MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSF

 0.2. Size:242K  inchange semiconductor
 ipd60r360p7s.pdf pdf_icon

IPD60R360P7

isc N-Channel MOSFET Transistor IPD60R360P7S,IIPD60R360P7S FEATURES Static drain-source on-resistance RDS(on) 0.36 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for hard and soft switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou

MOSTRAR MÁS

Otros transistores... IPD530N15N3 , IPD600N25N3 , IPD60R170CFD7 , IPD60R180C7 , IPD60R180P7S , IPD60R280CFD7 , IPD60R280P7 , IPD60R280P7S , IRF840 , IPD60R360P7S , IPD60R3K4CE , IPD60R600P7 , IPD60R600P7S , IPD640N06L , IPD65R1K0CE , IPD65R1K5CE , IPD65R400CE .

 

 

 

 

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