All MOSFET. IPD60R360P7 Datasheet

 

IPD60R360P7 Datasheet and Replacement


   Type Designator: IPD60R360P7
   Marking Code: 60R360P7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 13 nC
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO-252
 

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IPD60R360P7 Datasheet (PDF)

 ..1. Size:905K  infineon
 ipd60r360p7.pdf pdf_icon

IPD60R360P7

IPD60R360P7MOSFETDPAK600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology fortabhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFE

 ..2. Size:242K  inchange semiconductor
 ipd60r360p7.pdf pdf_icon

IPD60R360P7

isc N-Channel MOSFET Transistor IPD60R360P7,IIPD60R360P7FEATURESStatic drain-source on-resistance:RDS(on)0.36Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for hard and soft switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sourc

 0.1. Size:1100K  infineon
 ipd60r360p7s.pdf pdf_icon

IPD60R360P7

IPD60R360P7SMOSFETDPAK600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology fortabhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSF

 0.2. Size:242K  inchange semiconductor
 ipd60r360p7s.pdf pdf_icon

IPD60R360P7

isc N-Channel MOSFET Transistor IPD60R360P7S,IIPD60R360P7SFEATURESStatic drain-source on-resistance:RDS(on)0.36Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for hard and soft switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

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