IPD60R360P7 - описание и поиск аналогов

 

IPD60R360P7. Аналоги и основные параметры

Наименование производителя: IPD60R360P7

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 41 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 9 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 7 ns

Cossⓘ - Выходная емкость: 10 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.36 Ohm

Тип корпуса: TO-252

Аналог (замена) для IPD60R360P7

- подборⓘ MOSFET транзистора по параметрам

 

IPD60R360P7 даташит

 ..1. Size:905K  infineon
ipd60r360p7.pdfpdf_icon

IPD60R360P7

IPD60R360P7 MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFE

 ..2. Size:242K  inchange semiconductor
ipd60r360p7.pdfpdf_icon

IPD60R360P7

isc N-Channel MOSFET Transistor IPD60R360P7,IIPD60R360P7 FEATURES Static drain-source on-resistance RDS(on) 0.36 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for hard and soft switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sourc

 0.1. Size:1100K  infineon
ipd60r360p7s.pdfpdf_icon

IPD60R360P7

IPD60R360P7S MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSF

 0.2. Size:242K  inchange semiconductor
ipd60r360p7s.pdfpdf_icon

IPD60R360P7

isc N-Channel MOSFET Transistor IPD60R360P7S,IIPD60R360P7S FEATURES Static drain-source on-resistance RDS(on) 0.36 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for hard and soft switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou

Другие MOSFET... IPD530N15N3 , IPD600N25N3 , IPD60R170CFD7 , IPD60R180C7 , IPD60R180P7S , IPD60R280CFD7 , IPD60R280P7 , IPD60R280P7S , IRF840 , IPD60R360P7S , IPD60R3K4CE , IPD60R600P7 , IPD60R600P7S , IPD640N06L , IPD65R1K0CE , IPD65R1K5CE , IPD65R400CE .

History: 2SK1837 | 2SK2161 | KP214A9

 

 

 

 

↑ Back to Top
.