IPP057N08N3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPP057N08N3
Código: 057N08N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 150 W
Voltaje máximo drenador - fuente |Vds|: 80 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 80 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3.5 V
Carga de la puerta (Qg): 52 nC
Tiempo de subida (tr): 66 nS
Conductancia de drenaje-sustrato (Cd): 963 pF
Resistencia entre drenaje y fuente RDS(on): 0.0057 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET IPP057N08N3
IPP057N08N3 Datasheet (PDF)
ipp057n08n3.pdf
isc N-Channel MOSFET Transistor IPP057N08N3 IIPP057N08N3FEATURESStatic drain-source on-resistance:RDS(on) 5.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25
ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf
IPP057N08N3 G IPI057N08N3 GIPB054N08N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 80 VDS N-channel, normal levelR 5.4mDS(on),max (SMD) Excellent gate charge x R product (FOM)DS(on)I 80 AD Very low on-resistance RDS(on)previous engineering 175 C operating temperaturesample codes:IPP06CN08N Pb-free lead plating; RoHS complia
ipp057n08n3g ipi057n08n3g ipb054n08n3g.pdf
IPP057N08N3 G IPI057N08N3 GIPB054N08N3 G 3 Power-TransistorProduct SummaryFeaturesV 80 VDSQ ' 381>>5?B=1
ipp057n06n3 ipb054n06n3 ipp057n06n3 ipb057n06n3.pdf
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ipb054n06n3g ipp057n06n3g.pdf
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ipp057n06n3.pdf
isc N-Channel MOSFET Transistor IPP057N06N3 IIPP057N06N3FEATURESStatic drain-source on-resistance:RDS(on) 5.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONIdeal for high frequency switchingOptimized technology for DC/DC convertersABSOLUTE M
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