IPP057N08N3 MOSFET Datasheet: N-Ch, 80V, 80A. Full specification with pinout and replacement list

IPP057N08N3 Specs and Replacement

Type Designator: IPP057N08N3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 66 nS

Cossⓘ - Output Capacitance: 963 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm

Package: TO220

IPP057N08N3 substitution

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IPP057N08N3 datasheet

..1. Size:245K inchange semiconductor
ipp057n08n3.pdf pdf_icon

isc N-Channel MOSFET Transistor IPP057N08N3 IIPP057N08N3 FEATURES Static drain-source on-resistance RDS(on) 5.7m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ... See More ⇒

0.1. Size:526K infineon
ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf pdf_icon

IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G OptiMOS 3 Power-Transistor Product Summary Features V 80 V DS N-channel, normal level R 5.4 m DS(on),max (SMD) Excellent gate charge x R product (FOM) DS(on) I 80 A D Very low on-resistance R DS(on) previous engineering 175 C operating temperature sample codes IPP06CN08N Pb-free lead plating; RoHS complia... See More ⇒

0.2. Size:1022K infineon
ipp057n08n3g ipi057n08n3g ipb054n08n3g.pdf pdf_icon

IPP057N08N3 G IPI057N08N3 G IPB054N08N3 G 3 Power-Transistor Product Summary Features V 80 V DS Q ' 381>>5?B=1... See More ⇒

6.1. Size:691K infineon
ipp057n06n3 ipb054n06n3 ipp057n06n3 ipb057n06n3.pdf pdf_icon

pe IPB054N06N3 G IPP057N06N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R 4 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BC I D Q H35>5?B=1... See More ⇒