All MOSFET. IPP057N08N3 Datasheet

 

IPP057N08N3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IPP057N08N3
   Marking Code: 057N08N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 52 nC
   trⓘ - Rise Time: 66 nS
   Cossⓘ - Output Capacitance: 963 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
   Package: TO220

 IPP057N08N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPP057N08N3 Datasheet (PDF)

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 ipp057n08n3.pdf

IPP057N08N3 IPP057N08N3

isc N-Channel MOSFET Transistor IPP057N08N3 IIPP057N08N3FEATURESStatic drain-source on-resistance:RDS(on) 5.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25

 0.1. Size:526K  infineon
 ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf

IPP057N08N3 IPP057N08N3

IPP057N08N3 G IPI057N08N3 GIPB054N08N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 80 VDS N-channel, normal levelR 5.4mDS(on),max (SMD) Excellent gate charge x R product (FOM)DS(on)I 80 AD Very low on-resistance RDS(on)previous engineering 175 C operating temperaturesample codes:IPP06CN08N Pb-free lead plating; RoHS complia

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 ipp057n08n3g ipi057n08n3g ipb054n08n3g.pdf

IPP057N08N3 IPP057N08N3

IPP057N08N3 G IPI057N08N3 GIPB054N08N3 G 3 Power-TransistorProduct SummaryFeaturesV 80 VDSQ ' 381>>5?B=1

 6.1. Size:691K  infineon
 ipp057n06n3 ipb054n06n3 ipp057n06n3 ipb057n06n3.pdf

IPP057N08N3 IPP057N08N3

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 6.2. Size:689K  infineon
 ipb054n06n3g ipp057n06n3g.pdf

IPP057N08N3 IPP057N08N3

pe IPB054N06N3 G IPP057N06N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R 4 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BCI DQ H35>5?B=1

 6.3. Size:246K  inchange semiconductor
 ipp057n06n3.pdf

IPP057N08N3 IPP057N08N3

isc N-Channel MOSFET Transistor IPP057N06N3 IIPP057N06N3FEATURESStatic drain-source on-resistance:RDS(on) 5.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONIdeal for high frequency switchingOptimized technology for DC/DC convertersABSOLUTE M

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SMMBFJ310LT1G | NCE15P25J | VBH40-05B | NCE01P18 | SSS6N80A

 

 
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