Справочник MOSFET. IPP057N08N3

 

IPP057N08N3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPP057N08N3
   Маркировка: 057N08N
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 150 W
   Предельно допустимое напряжение сток-исток |Uds|: 80 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 3.5 V
   Максимально допустимый постоянный ток стока |Id|: 80 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 52 nC
   Время нарастания (tr): 66 ns
   Выходная емкость (Cd): 963 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0057 Ohm
   Тип корпуса: TO220

 Аналог (замена) для IPP057N08N3

 

 

IPP057N08N3 Datasheet (PDF)

 ..1. Size:245K  inchange semiconductor
ipp057n08n3.pdf

IPP057N08N3 IPP057N08N3

isc N-Channel MOSFET Transistor IPP057N08N3 IIPP057N08N3FEATURESStatic drain-source on-resistance:RDS(on) 5.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25

 0.1. Size:526K  infineon
ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf

IPP057N08N3 IPP057N08N3

IPP057N08N3 G IPI057N08N3 GIPB054N08N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 80 VDS N-channel, normal levelR 5.4mDS(on),max (SMD) Excellent gate charge x R product (FOM)DS(on)I 80 AD Very low on-resistance RDS(on)previous engineering 175 C operating temperaturesample codes:IPP06CN08N Pb-free lead plating; RoHS complia

 0.2. Size:1022K  infineon
ipp057n08n3g ipi057n08n3g ipb054n08n3g.pdf

IPP057N08N3 IPP057N08N3

IPP057N08N3 G IPI057N08N3 GIPB054N08N3 G 3 Power-TransistorProduct SummaryFeaturesV 80 VDSQ ' 381>>5?B=1

 6.1. Size:691K  infineon
ipp057n06n3 ipb054n06n3 ipp057n06n3 ipb057n06n3.pdf

IPP057N08N3 IPP057N08N3

pe IPB054N06N3 G IPP057N06N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R 4 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BCI DQ H35>5?B=1

 6.2. Size:689K  infineon
ipb054n06n3g ipp057n06n3g.pdf

IPP057N08N3 IPP057N08N3

pe IPB054N06N3 G IPP057N06N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R 4 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BCI DQ H35>5?B=1

 6.3. Size:246K  inchange semiconductor
ipp057n06n3.pdf

IPP057N08N3 IPP057N08N3

isc N-Channel MOSFET Transistor IPP057N06N3 IIPP057N06N3FEATURESStatic drain-source on-resistance:RDS(on) 5.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONIdeal for high frequency switchingOptimized technology for DC/DC convertersABSOLUTE M

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top