IRFR7446 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFR7446
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 98 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 56 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.9 VQgⓘ - Carga de la puerta: 65 nC
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 480 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0039 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET IRFR7446
IRFR7446 Datasheet (PDF)
irfr7446pbf.pdf
StrongIRFETIRFR7446PbFApplicationsl Brushed Motor drive applicationsHEXFET Power MOSFETl BLDC Motor drive applicationsl PWM Inverterized topologiesD VDSS40Vl Battery powered circuitsRDS(on) typ.3.0ml Half-bridge and full-bridge topologies max. 3.9ml Synchronous rectifier applicationsGl Resonant mode power suppliesID (Silicon Limited)120Al OR-ing
irfr7446pbf.pdf
StrongIRFETIRFR7446PbFApplicationsl Brushed Motor drive applicationsHEXFET Power MOSFETl BLDC Motor drive applicationsl PWM Inverterized topologiesD VDSS40Vl Battery powered circuitsRDS(on) typ.3.0ml Half-bridge and full-bridge topologies max. 3.9ml Synchronous rectifier applicationsGl Resonant mode power suppliesID (Silicon Limited)120Al OR-ing
irfr7446.pdf
isc N-Channel MOSFET Transistor IRFR7446, IIRFR7446FEATURESStatic drain-source on-resistance:RDS(on)3.9mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous rectifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
irfr7440pbf irfu7440pbf.pdf
StrongIRFETIRFR7440PbFIRFU7440PbFHEXFET Power MOSFETApplicationsDVDSS 40Vl Brushed Motor drive applicationsl BLDC Motor drive applicationsRDS(on) typ. 1.9ml PWM Inverterized topologies max. 2.4ml Battery powered circuits GID (Silicon Limited) 180Al Half-bridge and full-bridge topologiesl Electronic ballast applicationsID (Package Limited) 90A Sl Sy
irfr7440pbf irfu7440pbf.pdf
StrongIRFETIRFR7440PbFIRFU7440PbFHEXFET Power MOSFETApplicationsDVDSS 40Vl Brushed Motor drive applicationsl BLDC Motor drive applicationsRDS(on) typ. 1.9ml PWM Inverterized topologies max. 2.4ml Battery powered circuits GID (Silicon Limited) 180Al Half-bridge and full-bridge topologiesl Electronic ballast applicationsID (Package Limited) 90A Sl Sy
irfr7440.pdf
isc N-Channel MOSFET Transistor IRFR7440, IIRFR7440FEATURESStatic drain-source on-resistance:RDS(on)2.4mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous rectifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918