IRFR7446. Аналоги и основные параметры
Наименование производителя: IRFR7446
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 98 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 56 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 13 ns
Cossⓘ - Выходная емкость: 480 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0039 Ohm
Тип корпуса: TO-252
Аналог (замена) для IRFR7446
- подборⓘ MOSFET транзистора по параметрам
IRFR7446 даташит
..1. Size:272K international rectifier
irfr7446pbf.pdf 

StrongIRFET IRFR7446PbF Applications l Brushed Motor drive applications HEXFET Power MOSFET l BLDC Motor drive applications l PWM Inverterized topologies D VDSS 40V l Battery powered circuits RDS(on) typ. 3.0m l Half-bridge and full-bridge topologies max. 3.9m l Synchronous rectifier applications G l Resonant mode power supplies ID (Silicon Limited) 120A l OR-ing
..2. Size:242K inchange semiconductor
irfr7446.pdf 

isc N-Channel MOSFET Transistor IRFR7446, IIRFR7446 FEATURES Static drain-source on-resistance RDS(on) 3.9m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous rectifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta
7.1. Size:292K international rectifier
irfr7440pbf irfu7440pbf.pdf 

StrongIRFET IRFR7440PbF IRFU7440PbF HEXFET Power MOSFET Applications D VDSS 40V l Brushed Motor drive applications l BLDC Motor drive applications RDS(on) typ. 1.9m l PWM Inverterized topologies max. 2.4m l Battery powered circuits G ID (Silicon Limited) 180A l Half-bridge and full-bridge topologies l Electronic ballast applications ID (Package Limited) 90A S l Sy
7.2. Size:242K inchange semiconductor
irfr7440.pdf 

isc N-Channel MOSFET Transistor IRFR7440, IIRFR7440 FEATURES Static drain-source on-resistance RDS(on) 2.4m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous rectifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta
9.1. Size:581K international rectifier
irfr7540pbf irfu7540pbf.pdf 

StrongIRFET IRFR7540PbF IRFU7540PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications RDS(on) typ. 4.0m Battery powered circuits max 4.8m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 110A S Resonant
9.2. Size:576K international rectifier
irfr7740pbf irfu7740pbf.pdf 

StrongIRFET IRFR7740PbF IRFU7740PbF HEXFET Power MOSFET Application Brushed motor drive applications D VDSS 75V BLDC motor drive applications Battery powered circuits RDS(on) typ. 6.0m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 7.2m Resonant mode power supplies O
9.3. Size:576K international rectifier
irfr7546pbf irfu7546pbf.pdf 

StrongIRFET IRFR7546PbF IRFU7546PbF HEXFET Power MOSFET Application Brushed motor drive applications D VDSS 60V BLDC motor drive applications Battery powered circuits RDS(on) typ. 6.6m Half-bridge and full-bridge topologies max 7.9m G Synchronous rectifier applications ID (Silicon Limited) 71A Resonant
9.4. Size:574K international rectifier
irfr7746pbf irfu7746pbf.pdf 

StrongIRFET IRFR7746PbF IRFU7746PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 75V D BLDC Motor drive applications RDS(on) typ. 9.5m Battery powered circuits max 11.2m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 59A S Resona
9.5. Size:242K inchange semiconductor
irfr7540.pdf 

isc N-Channel MOSFET Transistor IRFR7540, IIRFR7540 FEATURES Static drain-source on-resistance RDS(on) 4.8m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous rectifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta
9.6. Size:242K inchange semiconductor
irfr7740.pdf 

isc N-Channel MOSFET Transistor IRFR7740, IIRFR7740 FEATURES Static drain-source on-resistance RDS(on) 7.2m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous rectifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta
9.7. Size:242K inchange semiconductor
irfr7546.pdf 

isc N-Channel MOSFET Transistor IRFR7546, IIRFR7546 FEATURES Static drain-source on-resistance RDS(on) 7.9m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous rectifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta
9.8. Size:241K inchange semiconductor
irfr7746.pdf 

isc N-Channel MOSFET Transistor IRFR7746, IIRFR7746 FEATURES Static drain-source on-resistance RDS(on) 11.2m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous rectifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt
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