IRFR7446 Datasheet and Replacement
Type Designator: IRFR7446
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 98
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 56
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 13
nS
Cossⓘ -
Output Capacitance: 480
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0039
Ohm
Package:
TO-252
- MOSFET Cross-Reference Search
IRFR7446 Datasheet (PDF)
..1. Size:272K international rectifier
irfr7446pbf.pdf 
StrongIRFETIRFR7446PbFApplicationsl Brushed Motor drive applicationsHEXFET Power MOSFETl BLDC Motor drive applicationsl PWM Inverterized topologiesD VDSS40Vl Battery powered circuitsRDS(on) typ.3.0ml Half-bridge and full-bridge topologies max. 3.9ml Synchronous rectifier applicationsGl Resonant mode power suppliesID (Silicon Limited)120Al OR-ing
..2. Size:242K inchange semiconductor
irfr7446.pdf 
isc N-Channel MOSFET Transistor IRFR7446, IIRFR7446FEATURESStatic drain-source on-resistance:RDS(on)3.9mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous rectifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
7.1. Size:292K international rectifier
irfr7440pbf irfu7440pbf.pdf 
StrongIRFETIRFR7440PbFIRFU7440PbFHEXFET Power MOSFETApplicationsDVDSS 40Vl Brushed Motor drive applicationsl BLDC Motor drive applicationsRDS(on) typ. 1.9ml PWM Inverterized topologies max. 2.4ml Battery powered circuits GID (Silicon Limited) 180Al Half-bridge and full-bridge topologiesl Electronic ballast applicationsID (Package Limited) 90A Sl Sy
7.2. Size:242K inchange semiconductor
irfr7440.pdf 
isc N-Channel MOSFET Transistor IRFR7440, IIRFR7440FEATURESStatic drain-source on-resistance:RDS(on)2.4mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous rectifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
9.1. Size:581K international rectifier
irfr7540pbf irfu7540pbf.pdf 
StrongIRFET IRFR7540PbF IRFU7540PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications RDS(on) typ. 4.0mBattery powered circuits max 4.8m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 110A S Resonant
9.2. Size:576K international rectifier
irfr7740pbf irfu7740pbf.pdf 
StrongIRFET IRFR7740PbF IRFU7740PbF HEXFET Power MOSFET Application Brushed motor drive applications DVDSS 75V BLDC motor drive applications Battery powered circuits RDS(on) typ. 6.0m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 7.2m Resonant mode power supplies O
9.3. Size:576K international rectifier
irfr7546pbf irfu7546pbf.pdf 
StrongIRFET IRFR7546PbF IRFU7546PbF HEXFET Power MOSFET Application Brushed motor drive applications DVDSS 60V BLDC motor drive applications Battery powered circuits RDS(on) typ. 6.6m Half-bridge and full-bridge topologies max 7.9mG Synchronous rectifier applications ID (Silicon Limited) 71A Resonant
9.4. Size:574K international rectifier
irfr7746pbf irfu7746pbf.pdf 
StrongIRFET IRFR7746PbF IRFU7746PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 75V D BLDC Motor drive applications RDS(on) typ. 9.5mBattery powered circuits max 11.2m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 59A S Resona
9.5. Size:242K inchange semiconductor
irfr7540.pdf 
isc N-Channel MOSFET Transistor IRFR7540, IIRFR7540FEATURESStatic drain-source on-resistance:RDS(on)4.8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous rectifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
9.6. Size:242K inchange semiconductor
irfr7740.pdf 
isc N-Channel MOSFET Transistor IRFR7740, IIRFR7740FEATURESStatic drain-source on-resistance:RDS(on)7.2mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous rectifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
9.7. Size:242K inchange semiconductor
irfr7546.pdf 
isc N-Channel MOSFET Transistor IRFR7546, IIRFR7546FEATURESStatic drain-source on-resistance:RDS(on)7.9mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous rectifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta
9.8. Size:241K inchange semiconductor
irfr7746.pdf 
isc N-Channel MOSFET Transistor IRFR7746, IIRFR7746FEATURESStatic drain-source on-resistance:RDS(on)11.2mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous rectifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt
Datasheet: FMP36-015P
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History: GSM3030
| IRF6612
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