SFR9130 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SFR9130
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 57 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 9.8 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 30 nC
Tiempo de subida (tr): 22 nS
Conductancia de drenaje-sustrato (Cd): 160 pF
Resistencia entre drenaje y fuente RDS(on): 0.3 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET SFR9130
SFR9130 Datasheet (PDF)
sfu9130 sfr9130.pdf
SFR/U9130Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = -9.8 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -100V Lower RDS(ON) : 0.225 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum
sfr9130.pdf
Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = -9.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -100V Lower RDS(ON) : 0.225 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol C
sfr9110tf.pdf
SFR/U9110Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 1.2 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -2.8 An Improved Gate Chargen Extended Safe Operating AreaD-PAK I-PAKn Lower Leakage Current : 10 A(Max.) @ VDS = -100Vn Lower RDS(ON) : 0.912 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute M
sfr9120 sfu9120.pdf
SFR/U9120Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 0.6 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -4.9 An Improved Gate Chargen Extended Safe Operating AreaD-PAK I-PAKn Lower Leakage Current : 10 A(Max.) @ VDS = -100Vn Lower RDS(ON) : 0.444 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute M
sfu9110 sfr9110.pdf
SFR/U9110Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 1.2 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -2.8 An Improved Gate Chargen Extended Safe Operating AreaD-PAK I-PAKn Lower Leakage Current : 10 A(Max.) @ VDS = -100Vn Lower RDS(ON) : 0.912 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute M
sfr9120.pdf
Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.6 Rugged Gate Oxide Technology Lower Input CapacitanceID = -4.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -100V Lower RDS(ON) : 0.444 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol C
sfr9110.pdf
Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = -2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -100V Lower RDS(ON) : 0.912 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara
Otros transistores... SFP9Z24 , SFP9Z34 , SFR2955 , SFR9014 , SFR9024 , SFR9034 , SFR9110 , SFR9120 , IRF1405 , SFR9210 , SFR9214 , SFR9220 , SFR9224 , SFS2955 , SFS9510 , SFS9520 , SFS9530 .
History: WMO09P10TS
