SFR9130 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SFR9130
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 57 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET SFR9130

SFR9130 Datasheet (PDF)

..1. Size:262K fairchild semi
sfu9130 sfr9130.pdf

SFR/U9130Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = -9.8 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -100V Lower RDS(ON) : 0.225 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum

..2. Size:498K samsung
sfr9130.pdf

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = -9.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -100V Lower RDS(ON) : 0.225 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol C

9.1. Size:250K fairchild semi
sfr9110tf.pdf

SFR/U9110Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 1.2 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -2.8 An Improved Gate Chargen Extended Safe Operating AreaD-PAK I-PAKn Lower Leakage Current : 10 A(Max.) @ VDS = -100Vn Lower RDS(ON) : 0.912 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute M

9.2. Size:228K fairchild semi
sfr9120 sfu9120.pdf

SFR/U9120Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 0.6 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -4.9 An Improved Gate Chargen Extended Safe Operating AreaD-PAK I-PAKn Lower Leakage Current : 10 A(Max.) @ VDS = -100Vn Lower RDS(ON) : 0.444 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute M

9.3. Size:253K fairchild semi
sfu9110 sfr9110.pdf

9.4. Size:496K samsung
sfr9120.pdf

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.6 Rugged Gate Oxide Technology Lower Input CapacitanceID = -4.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -100V Lower RDS(ON) : 0.444 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol C

9.5. Size:427K samsung
sfr9110.pdf

Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = -2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -100V Lower RDS(ON) : 0.912 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara

Otros transistores... SFP9Z24 , SFP9Z34 , SFR2955 , SFR9014 , SFR9024 , SFR9034 , SFR9110 , SFR9120 , AO4468 , SFR9210 , SFR9214 , SFR9220 , SFR9224 , SFS2955 , SFS9510 , SFS9520 , SFS9530 .

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