SFR9130 MOSFET Datasheet: P-Ch, 100V, 9.8A. Full specification with pinout and replacement list

SFR9130 Specs and Replacement

   Type Designator: SFR9130
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 57 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO252

SFR9130 substitution

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SFR9130 datasheet

..1. Size:262K fairchild semi
sfu9130 sfr9130.pdf pdf_icon

SFR/U9130 Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = -9.8 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = -100V Lower RDS(ON) 0.225 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum... See More ⇒

..2. Size:498K samsung
sfr9130.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = -9.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -100V Lower RDS(ON) 0.225 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol C... See More ⇒

9.1. Size:250K fairchild semi
sfr9110tf.pdf pdf_icon

SFR/U9110 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS(on) = 1.2 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -2.8 A n Improved Gate Charge n Extended Safe Operating Area D-PAK I-PAK n Lower Leakage Current 10 A(Max.) @ VDS = -100V n Lower RDS(ON) 0.912 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute M... See More ⇒

9.2. Size:228K fairchild semi
sfr9120 sfu9120.pdf pdf_icon

SFR/U9120 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS(on) = 0.6 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -4.9 A n Improved Gate Charge n Extended Safe Operating Area D-PAK I-PAK n Lower Leakage Current 10 A(Max.) @ VDS = -100V n Lower RDS(ON) 0.444 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute M... See More ⇒