MDF18N50 Todos los transistores

 

MDF18N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MDF18N50
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 37 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 74 nS
   Cossⓘ - Capacitancia de salida: 302 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.27 Ohm
   Paquete / Cubierta: TO-220F
     - Selección de transistores por parámetros

 

MDF18N50 Datasheet (PDF)

 ..1. Size:819K  magnachip
mdf18n50.pdf pdf_icon

MDF18N50

MDF18N50 N-Channel MOSFET 500V, 18 A, 0.27 General Description Features The MDF18N50 uses advanced MagnaChips MOSFET V = 500V DSTechnology, which provides low on-state resistance, high I = 18A @V = 10V D GS R 0.27 @V = 10V switching performance and excellent quality. DS(ON) GSMDF18N50 is suitable device for SMPS, high speed switching Applications and general

 0.1. Size:1244K  magnachip
mdf18n50bth mdp18n50bth.pdf pdf_icon

MDF18N50

MDP18N50B / MDF18N50B N-Channel MOSFET 500V, 18.0 A, 0.27General Description Features The MDP/F18N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 18.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.27 @VGS = 10V excellent quality. MDP/F18N50B is suitable device for SMPS, HID Applications and general

 0.2. Size:245K  inchange semiconductor
mdf18n50th.pdf pdf_icon

MDF18N50

isc N-Channel MOSFET Transistor MDF18N50THFEATURES Drain-source on-resistance:RDS(on) 0.27 (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONPower SupplyHigh Current, High Speed SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

 0.3. Size:245K  inchange semiconductor
mdf18n50bth.pdf pdf_icon

MDF18N50

isc N-Channel MOSFET Transistor MDF18N50BTHFEATURES Drain-source on-resistance:RDS(on) 0.27 (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONPower SupplyHigh Current, High Speed SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: UPA1720 | IRFN150SMD | FQD4N20 | PTP08N65 | FDS4465F085 | 2N6904 | STS3P6F6

 

 
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