MDF18N50 Datasheet. Specs and Replacement

Type Designator: MDF18N50  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 74 nS

Cossⓘ - Output Capacitance: 302 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm

Package: TO-220F

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MDF18N50 substitution

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MDF18N50 datasheet

 ..1. Size:819K  magnachip
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MDF18N50

MDF18N50 N-Channel MOSFET 500V, 18 A, 0.27 General Description Features The MDF18N50 uses advanced MagnaChip s MOSFET V = 500V DS Technology, which provides low on-state resistance, high I = 18A @V = 10V D GS R 0.27 @V = 10V switching performance and excellent quality. DS(ON) GS MDF18N50 is suitable device for SMPS, high speed switching Applications and general ... See More ⇒

 0.1. Size:1244K  magnachip
 mdf18n50bth mdp18n50bth.pdf pdf_icon

MDF18N50

MDP18N50B / MDF18N50B N-Channel MOSFET 500V, 18.0 A, 0.27 General Description Features The MDP/F18N50B uses advanced Magnachip s VDS = 500V MOSFET Technology, which provides low on-state ID = 18.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.27 @VGS = 10V excellent quality. MDP/F18N50B is suitable device for SMPS, HID Applications and general... See More ⇒

 0.2. Size:245K  inchange semiconductor
 mdf18n50th.pdf pdf_icon

MDF18N50

isc N-Channel MOSFET Transistor MDF18N50TH FEATURES Drain-source on-resistance RDS(on) 0.27 (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Power Supply High Current, High Speed Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER ... See More ⇒

 0.3. Size:245K  inchange semiconductor
 mdf18n50bth.pdf pdf_icon

MDF18N50

isc N-Channel MOSFET Transistor MDF18N50BTH FEATURES Drain-source on-resistance RDS(on) 0.27 (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Power Supply High Current, High Speed Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒

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Detailed specifications: IRFR7740, IRFR7746, IRFR812, IRFR825TR, IRFR8314, IRFS3307ZTRL, IRFS7534TRLPBF, ISTP16NF06, IRL3713, MDP1723, MDP1922, P50NF06, SCT3060AL, SPA11N60C3E8185, SPD30N03S2L, SPD50N03S2, SUD70090E

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