MDF18N50 - параметры транзистора MOSFET, его аналоги, datasheet

MDF18N50 Datasheet (PDF)

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MDF18N50 N-Channel MOSFET 500V, 18 A, 0.27 General Description Features The MDF18N50 uses advanced MagnaChips MOSFET V = 500V DSTechnology, which provides low on-state resistance, high I = 18A @V = 10V D GS R 0.27 @V = 10V switching performance and excellent quality. DS(ON) GSMDF18N50 is suitable device for SMPS, high speed switching Applications and general

0.1. Size:1244K magnachip
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MDP18N50B / MDF18N50B N-Channel MOSFET 500V, 18.0 A, 0.27General Description Features The MDP/F18N50B uses advanced Magnachips VDS = 500V MOSFET Technology, which provides low on-state ID = 18.0A @VGS = 10V resistance, high switching performance and RDS(ON) 0.27 @VGS = 10V excellent quality. MDP/F18N50B is suitable device for SMPS, HID Applications and general

0.2. Size:245K inchange semiconductor
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isc N-Channel MOSFET Transistor MDF18N50THFEATURES Drain-source on-resistance:RDS(on) 0.27 (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONPower SupplyHigh Current, High Speed SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

0.3. Size:245K inchange semiconductor
mdf18n50bth.pdf pdf_icon

isc N-Channel MOSFET Transistor MDF18N50BTHFEATURES Drain-source on-resistance:RDS(on) 0.27 (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONPower SupplyHigh Current, High Speed SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

Другие MOSFET... IRFR7740 , IRFR7746 , IRFR812 , IRFR825TR , IRFR8314 , IRFS3307ZTRL , IRFS7534TRLPBF , ISTP16NF06 , NCEP15T14 , MDP1723 , MDP1922 , P50NF06 , SCT3060AL , SPA11N60C3E8185 , SPD30N03S2L , SPD50N03S2 , SUD70090E .