SPA11N60C3E8185 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SPA11N60C3E8185 Datasheet (PDF)

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SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.38 New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 High peak current capability 2 1 P-TO220-3-31 Improved transconductance PG-TO-2

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isc N-Channel MOSFET Transistor SPA11N60C3E8185 SPA11N60C3E8185 FEATURES Static drain-source on-resistance RDS(on) 0.38 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability Improved transconductance A

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPA11N60C3 FEATURES New revolutionary high voltage technology Ultra low gate charge High peak current capability Improved transconductance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25

Otros transistores... IRFS3307ZTRL , IRFS7534TRLPBF , ISTP16NF06 , MDF18N50 , MDP1723 , MDP1922 , P50NF06 , SCT3060AL , IRLB3034 , SPD30N03S2L , SPD50N03S2 , SUD70090E , 2N3380 , 2N3382 , 2N3384 , 2N3386 , 2N3970 .