SPA11N60C3E8185 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SPA11N60C3E8185
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 125 W
Tensión drenaje-fuente (Vds): 600 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 11 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 3.9 V
Resistencia drenaje-fuente RDS(on): 0.38 Ohm
Empaquetado / Estuche: TO-220C
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SPA11N60C3E8185 Datasheet (PDF)
1.1. spp11n60c3 spi11n60c3 spa11n60c3 e8185 rev.3.2.pdf 
Size:654K _infineon
SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.38 ? New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 High peak current capability 2 1 P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111: Fully
1.2. spa11n60cfd rev1.4.pdf Size:555K _infineon
SPA11N60CFD CoolMOSTM Power Transistor Product Summary Features V 600 V DS New revolutionary high voltage technology R 0.44 DS(on),max Intrinsic fast-recovery body diode 1) 11 A I D Extremely low reverse recovery charge Ultra low gate charge PG-TO220-3-31 Extreme dv /dt rated High peak current capability Periodic avalanche rated Qualified for industrial grade a
1.3. spa11n60c3e8185.pdf Size:246K _inchange_semiconductor
isc N-Channel MOSFET Transistor SPA11N60C3E8185，SPA11N60C3E8185 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·A
1.4. spa11n60cfd.pdf Size:200K _inchange_semiconductor
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SPA11N60CFD ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATING
1.5. spa11n60c3.pdf Size:201K _inchange_semiconductor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPA11N60C3 ·FEATURES ·New revolutionary high voltage technology ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25
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