SPA11N60C3E8185 PDF and Equivalents Search

 

SPA11N60C3E8185 Specs and Replacement

Type Designator: SPA11N60C3E8185

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 390 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO-220

SPA11N60C3E8185 substitution

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SPA11N60C3E8185 datasheet

 0.1. Size:678K  infineon
 spp11n60c3 spi11n60c3 spa11n60c3 spa11n60c3e8185.pdf pdf_icon

SPA11N60C3E8185

SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.38 New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 High peak current capability 2 1 P-TO220-3-31 Improved transconductance PG-TO-2... See More ⇒

 0.2. Size:246K  inchange semiconductor
 spa11n60c3e8185.pdf pdf_icon

SPA11N60C3E8185

isc N-Channel MOSFET Transistor SPA11N60C3E8185 SPA11N60C3E8185 FEATURES Static drain-source on-resistance RDS(on) 0.38 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability Improved transconductance A... See More ⇒

 4.1. Size:654K  infineon
 spp11n60c3 spi11n60c3 spa11n60c3 e8185 rev.3.2.pdf pdf_icon

SPA11N60C3E8185

SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.38 New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 High peak current capability 2 1 P-TO220-3-31 Improved transconductance PG-TO-2... See More ⇒

 4.2. Size:201K  inchange semiconductor
 spa11n60c3.pdf pdf_icon

SPA11N60C3E8185

INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPA11N60C3 FEATURES New revolutionary high voltage technology Ultra low gate charge High peak current capability Improved transconductance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒

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Detailed specifications: IRFS3307ZTRL, IRFS7534TRLPBF, ISTP16NF06, MDF18N50, MDP1723, MDP1922, P50NF06, SCT3060AL, IRLB3034, SPD30N03S2L, SPD50N03S2, SUD70090E, 2N3380, 2N3382, 2N3384, 2N3386, 2N3970

Keywords - SPA11N60C3E8185 MOSFET specs

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