All MOSFET. SPA11N60C3E8185 Datasheet

 

SPA11N60C3E8185 Datasheet and Replacement


   Type Designator: SPA11N60C3E8185
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO-220
 

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SPA11N60C3E8185 Datasheet (PDF)

 0.1. Size:678K  infineon
 spp11n60c3 spi11n60c3 spa11n60c3 spa11n60c3e8185.pdf pdf_icon

SPA11N60C3E8185

SPP11N60C3SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated3 High peak current capability21P-TO220-3-31 Improved transconductance PG-TO-2

 0.2. Size:246K  inchange semiconductor
 spa11n60c3e8185.pdf pdf_icon

SPA11N60C3E8185

isc N-Channel MOSFET Transistor SPA11N60C3E8185SPA11N60C3E8185FEATURESStatic drain-source on-resistance:RDS(on) 0.38Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityImproved transconductanceA

 4.1. Size:654K  infineon
 spp11n60c3 spi11n60c3 spa11n60c3 e8185 rev.3.2.pdf pdf_icon

SPA11N60C3E8185

SPP11N60C3SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated3 High peak current capability21P-TO220-3-31 Improved transconductance PG-TO-2

 4.2. Size:201K  inchange semiconductor
 spa11n60c3.pdf pdf_icon

SPA11N60C3E8185

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPA11N60C3FEATURESNew revolutionary high voltage technologyUltra low gate chargeHigh peak current capabilityImproved transconductance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

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Datasheet: IRFS3307ZTRL , IRFS7534TRLPBF , ISTP16NF06 , MDF18N50 , MDP1723 , MDP1922 , P50NF06 , SCT3060AL , 60N06 , SPD30N03S2L , SPD50N03S2 , SUD70090E , 2N3380 , 2N3382 , 2N3384 , 2N3386 , 2N3970 .

History: FQA18N50V2 | IRFPS40N60K | KU2751K | IRF60B217

Keywords - SPA11N60C3E8185 MOSFET datasheet

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