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SPD50N03S2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPD50N03S2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 136 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0073 Ohm
   Paquete / Cubierta: TO-252
 

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Principales características: SPD50N03S2

 ..1. Size:243K  inchange semiconductor
spd50n03s2.pdf pdf_icon

SPD50N03S2

isc N-Channel MOSFET Transistor SPD50N03S2,ISPD50N03S2 FEATURES Static drain-source on-resistance RDS(on) 7.3m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Superior thermal resistance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 3

 0.1. Size:1183K  infineon
spd50n03s2l-06.pdf pdf_icon

SPD50N03S2

SPD50N03S2L-06 OptiMOS Power-Transistor Feature Product Summary N-Channel VDS 30 V Enhancement mode RDS(on) 6.4 m Logic Level ID 50 A P - TO252 -3 High Current Rating Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated Ug2kwjj qjfi uqfynsl@ W tMX htruqnfsy

 0.2. Size:272K  infineon
spd50n03s2l-06 spd50n03s2l-06t.pdf pdf_icon

SPD50N03S2

SPD50N03S2L-06 OptiMOS Power-Transistor Product Summary Feature VDS 30 V N-Channel RDS(on) 6.4 m Enhancement mode ID 50 A Logic Level PG-TO252-3-11 High Current Rating Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated Type Package Ordering Code Marking SP

 0.3. Size:1181K  infineon
spd50n03s2-07 .pdf pdf_icon

SPD50N03S2

SPD50N03S2-07 G OptiMOS Power-Transistor Product Summary Feature VDS 30 V N-Channel RDS(on) 7.3 m Enhancement mode ID 50 A Excellent Gate Charge x RDS(on) product (FOM) P -TO252-3 Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated Ug2kwjj qjfi uqfynsl@ W tMX htruqnfsy Type Package Marking SPD50N03S2-07 L PN0307

Otros transistores... ISTP16NF06 , MDF18N50 , MDP1723 , MDP1922 , P50NF06 , SCT3060AL , SPA11N60C3E8185 , SPD30N03S2L , IRFB7545 , SUD70090E , 2N3380 , 2N3382 , 2N3384 , 2N3386 , 2N3970 , 2N3971 , 2N3972 .

 

 
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