SPD50N03S2 Todos los transistores

 

SPD50N03S2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SPD50N03S2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 136 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0073 Ohm
   Paquete / Cubierta: TO-252

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SPD50N03S2 Datasheet (PDF)

 ..1. Size:243K  inchange semiconductor
spd50n03s2.pdf

SPD50N03S2 SPD50N03S2

isc N-Channel MOSFET Transistor SPD50N03S2,ISPD50N03S2FEATURESStatic drain-source on-resistance:RDS(on)7.3mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuperior thermal resistanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 3

 0.1. Size:1183K  infineon
spd50n03s2l-06.pdf

SPD50N03S2 SPD50N03S2

SPD50N03S2L-06 OptiMOS Power-TransistorFeatureProduct Summary N-ChannelVDS30 V Enhancement modeRDS(on) 6.4 m Logic LevelID 50 AP - TO252 -3 High Current Rating Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Ug2kwjj qjfi uqfynsl@ W tMX htruqnfsy

 0.2. Size:272K  infineon
spd50n03s2l-06 spd50n03s2l-06t.pdf

SPD50N03S2 SPD50N03S2

SPD50N03S2L-06OptiMOS Power-TransistorProduct SummaryFeatureVDS30 V N-ChannelRDS(on) 6.4 m Enhancement modeID 50 A Logic LevelPG-TO252-3-11 High Current Rating Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSP

 0.3. Size:1181K  infineon
spd50n03s2-07 .pdf

SPD50N03S2 SPD50N03S2

SPD50N03S2-07 GOptiMOS Power-TransistorProduct SummaryFeatureVDS30 V N-ChannelRDS(on) 7.3 m Enhancement modeID 50 A Excellent Gate Charge x RDS(on) product (FOM)P -TO252-3 Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Ug2kwjj qjfi uqfynsl@ W tMX htruqnfsyType Package MarkingSPD50N03S2-07 L PN0307

 0.4. Size:1179K  infineon
spd50n03s2-07.pdf

SPD50N03S2 SPD50N03S2

SPD50N03S2-07 GOptiMOS Power-TransistorProduct SummaryFeatureVDS30 V N-ChannelRDS(on) 7.3 m Enhancement modeID 50 A Excellent Gate Charge x RDS(on) product (FOM)P -TO252-3 Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Ug2kwjj qjfi uqfynsl@ W tMX htruqnfsyType Package MarkingSPD50N03S2-07 L PN0307

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: FQPF4N90

 

 
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History: FQPF4N90

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