SPD50N03S2 Todos los transistores

 

SPD50N03S2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SPD50N03S2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 136 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 50 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Resistencia drenaje-fuente RDS(on): 0.0073 Ohm

Empaquetado / Estuche: TO-252

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SPD50N03S2 Datasheet (PDF)

1.1. spd50n03s2l-06 spd50n03s2l-06t.pdf Size:272K _update

SPD50N03S2
SPD50N03S2

SPD50N03S2L-06 OptiMOS Power-Transistor Product Summary Feature VDS 30 V • N-Channel RDS(on) 6.4 mΩ • Enhancement mode ID 50 A • Logic Level PG-TO252-3-11 • High Current Rating • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated Type Package Ordering Code Marking SP

1.2. spd50n03s2-07.pdf Size:1179K _update

SPD50N03S2
SPD50N03S2

SPD50N03S2-07 G OptiMOS Power-Transistor Product Summary Feature VDS 30 V • N-Channel RDS(on) 7.3 m • Enhancement mode ID 50 A • Excellent Gate Charge x RDS(on) product (FOM) P -TO252-3 • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated ´ Ug2kwjj qjfi uqfynsl@ W tMX htruqnfsy Type Package Marking SPD50N03S2-07 L PN0307

 1.3. spd50n03s2-07rev1.2.pdf Size:1181K _infineon

SPD50N03S2
SPD50N03S2

SPD50N03S2-07 G OptiMOS Power-Transistor Product Summary Feature VDS 30 V N-Channel RDS(on) 7.3 m Enhancement mode ID 50 A Excellent Gate Charge x RDS(on) product (FOM) P -TO252-3 Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated ? Ug2kwjj qjfi uqfynsl@ W tMX htruqnfsy Type Package Marking SPD50N03S2-07 L PN0307 P -TO252-3 Maxim

1.4. spd50n03s2l-06rev1.2.pdf Size:1183K _infineon

SPD50N03S2
SPD50N03S2

SPD50N03S2L-06 OptiMOS Power-Transistor Feature Product Summary N-Channel VDS 30 V Enhancement mode RDS(on) 6.4 m Logic Level ID 50 A P - TO252 -3 High Current Rating Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated ? Ug2kwjj qjfi uqfynsl@ W tMX htruqnfsy Type Package Marking

 1.5. spd50n03s2.pdf Size:243K _inchange_semiconductor

SPD50N03S2
SPD50N03S2

isc N-Channel MOSFET Transistor SPD50N03S2,ISPD50N03S2 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤7.3mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Superior thermal resistance ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 3

Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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