All MOSFET. SPD50N03S2 Datasheet

 

SPD50N03S2 MOSFET. Datasheet pdf. Equivalent

Type Designator: SPD50N03S2

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 136 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 50 A

Maximum Junction Temperature (Tj): 175 °C

Maximum Drain-Source On-State Resistance (Rds): 0.0073 Ohm

Package: TO-252

SPD50N03S2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPD50N03S2 Datasheet (PDF)

1.1. spd50n03s2l-06 spd50n03s2l-06t.pdf Size:272K _update

SPD50N03S2
SPD50N03S2

SPD50N03S2L-06 OptiMOS Power-Transistor Product Summary Feature VDS 30 V • N-Channel RDS(on) 6.4 mΩ • Enhancement mode ID 50 A • Logic Level PG-TO252-3-11 • High Current Rating • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated Type Package Ordering Code Marking SP

1.2. spd50n03s2-07.pdf Size:1179K _update

SPD50N03S2
SPD50N03S2

SPD50N03S2-07 G OptiMOS Power-Transistor Product Summary Feature VDS 30 V • N-Channel RDS(on) 7.3 m • Enhancement mode ID 50 A • Excellent Gate Charge x RDS(on) product (FOM) P -TO252-3 • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated ´ Ug2kwjj qjfi uqfynsl@ W tMX htruqnfsy Type Package Marking SPD50N03S2-07 L PN0307

 1.3. spd50n03s2-07rev1.2.pdf Size:1181K _infineon

SPD50N03S2
SPD50N03S2

SPD50N03S2-07 G OptiMOS Power-Transistor Product Summary Feature VDS 30 V N-Channel RDS(on) 7.3 m Enhancement mode ID 50 A Excellent Gate Charge x RDS(on) product (FOM) P -TO252-3 Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated ? Ug2kwjj qjfi uqfynsl@ W tMX htruqnfsy Type Package Marking SPD50N03S2-07 L PN0307 P -TO252-3 Maxim

1.4. spd50n03s2l-06rev1.2.pdf Size:1183K _infineon

SPD50N03S2
SPD50N03S2

SPD50N03S2L-06 OptiMOS Power-Transistor Feature Product Summary N-Channel VDS 30 V Enhancement mode RDS(on) 6.4 m Logic Level ID 50 A P - TO252 -3 High Current Rating Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated ? Ug2kwjj qjfi uqfynsl@ W tMX htruqnfsy Type Package Marking

 1.5. spd50n03s2.pdf Size:243K _inchange_semiconductor

SPD50N03S2
SPD50N03S2

isc N-Channel MOSFET Transistor SPD50N03S2,ISPD50N03S2 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤7.3mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Superior thermal resistance ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 3

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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