SPD50N03S2 - аналоги, параметры транзистора - Справочник транзисторов

SPD50N03S2 технические параметры

..1. Size:243K inchange semiconductor
spd50n03s2.pdf pdf_icon

isc N-Channel MOSFET Transistor SPD50N03S2,ISPD50N03S2 FEATURES Static drain-source on-resistance RDS(on) 7.3m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Superior thermal resistance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 3

0.1. Size:1183K infineon
spd50n03s2l-06.pdf pdf_icon

SPD50N03S2L-06 OptiMOS Power-Transistor Feature Product Summary N-Channel VDS 30 V Enhancement mode RDS(on) 6.4 m Logic Level ID 50 A P - TO252 -3 High Current Rating Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated Ug2kwjj qjfi uqfynsl@ W tMX htruqnfsy

0.2. Size:272K infineon
spd50n03s2l-06 spd50n03s2l-06t.pdf pdf_icon

SPD50N03S2L-06 OptiMOS Power-Transistor Product Summary Feature VDS 30 V N-Channel RDS(on) 6.4 m Enhancement mode ID 50 A Logic Level PG-TO252-3-11 High Current Rating Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated Type Package Ordering Code Marking SP

0.3. Size:1181K infineon
spd50n03s2-07 .pdf pdf_icon

SPD50N03S2-07 G OptiMOS Power-Transistor Product Summary Feature VDS 30 V N-Channel RDS(on) 7.3 m Enhancement mode ID 50 A Excellent Gate Charge x RDS(on) product (FOM) P -TO252-3 Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated Ug2kwjj qjfi uqfynsl@ W tMX htruqnfsy Type Package Marking SPD50N03S2-07 L PN0307