Справочник MOSFET. SPD50N03S2

 

SPD50N03S2 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SPD50N03S2
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 136 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0073 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для SPD50N03S2

 

 

SPD50N03S2 Datasheet (PDF)

 ..1. Size:243K  inchange semiconductor
 spd50n03s2.pdf

SPD50N03S2 SPD50N03S2

isc N-Channel MOSFET Transistor SPD50N03S2,ISPD50N03S2FEATURESStatic drain-source on-resistance:RDS(on)7.3mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuperior thermal resistanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 3

 0.1. Size:1183K  infineon
 spd50n03s2l-06.pdf

SPD50N03S2 SPD50N03S2

SPD50N03S2L-06 OptiMOS Power-TransistorFeatureProduct Summary N-ChannelVDS30 V Enhancement modeRDS(on) 6.4 m Logic LevelID 50 AP - TO252 -3 High Current Rating Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Ug2kwjj qjfi uqfynsl@ W tMX htruqnfsy

 0.2. Size:272K  infineon
 spd50n03s2l-06 spd50n03s2l-06t.pdf

SPD50N03S2 SPD50N03S2

SPD50N03S2L-06OptiMOS Power-TransistorProduct SummaryFeatureVDS30 V N-ChannelRDS(on) 6.4 m Enhancement modeID 50 A Logic LevelPG-TO252-3-11 High Current Rating Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSP

 0.3. Size:1181K  infineon
 spd50n03s2-07 .pdf

SPD50N03S2 SPD50N03S2

SPD50N03S2-07 GOptiMOS Power-TransistorProduct SummaryFeatureVDS30 V N-ChannelRDS(on) 7.3 m Enhancement modeID 50 A Excellent Gate Charge x RDS(on) product (FOM)P -TO252-3 Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Ug2kwjj qjfi uqfynsl@ W tMX htruqnfsyType Package MarkingSPD50N03S2-07 L PN0307

 0.4. Size:1179K  infineon
 spd50n03s2-07.pdf

SPD50N03S2 SPD50N03S2

SPD50N03S2-07 GOptiMOS Power-TransistorProduct SummaryFeatureVDS30 V N-ChannelRDS(on) 7.3 m Enhancement modeID 50 A Excellent Gate Charge x RDS(on) product (FOM)P -TO252-3 Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Ug2kwjj qjfi uqfynsl@ W tMX htruqnfsyType Package MarkingSPD50N03S2-07 L PN0307

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