2N7002KT1G Todos los transistores

 ..1. Size:102K  onsemi
 2n7002kt1g.pdf

2N7002K, 2V7002K Small Signal MOSFET 60 V, 380 mA, Single, N-Channel, SOT-23 Features ESD Protected Low RDS(on) http //onsemi.com Surface Mount Package 2V Prefix for Automotive and Other Applications Requiring Unique V(BR)DSS RDS(on) MAX ID MAX Site and Control Change Requirements; AEC-Q101 Qualified and 1.6 W @ 10 V PPAP Capable 60 V 380 mA 2.5 W @ 4.5 V Thes

 6.1. Size:626K  wietron
 2n7002kt.pdf

2N7002KT N-Channel ENHANCEMENT MODE POWER MOSFET 3 P b Lead(Pb)-Free 1 2 FEATURES SC-89 * Gate-Source ESD Protected 1500 V * Fast Switching Speed Drain * Low On-Resistance * Low Voltage Driver 3 APPLICATIONS * Drivers Relays, Solenoids, Lamps, Hammers,Displays, Memories * Battery Operated Systems * Power Supply Converter Circuits 1 (Top View) 2 * Load/Power Switching Ce

 6.2. Size:261K  panjit
 2n7002ktb.pdf

2N7002KTB 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES RDS(ON), VGS@10V,IDS@500mA=3 RDS(ON), VGS@4.5V,IDS@200mA=4 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition 0.052(1.30) 0.024(0.60) Specially Designed for Battery Operated Systems, Solid-State Relays 0.

 6.3. Size:1518K  slkor
 2n7002kt.pdf

2N7002KT N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 100mA D R ( at V =10V) 8.0 DS(ON) GS R ( at V =4.5V) 13.0 DS(ON) GS ESD Protected Up to 2.0KV (HBM) General Description Trench Power LV MOSFET technology High Power and current handing capability Applications SOT-523 Load/Power Switching Int

 6.4. Size:1171K  leiditech
 2n7002kt.pdf

2N7002KT SOT-523 Plastic-Encapsulate Mosfets Features Gate 1 High density cell design for low R DS (ON) Voltage controlled small signal switch 3 Drain Rugged and reliable High saturation current capability Source 2 Applications (Top View) Load Switch for Portable Devices DC/DC Converter Marking KN Maximum Ratings (T =25 C unless otherwise spe