2N7002KT1G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2N7002KT1G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.38 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 4.2 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
   Paquete / Cubierta: SOT-23

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2N7002KT1G Datasheet (PDF)

..1. Size:102K onsemi
2n7002kt1g.pdf

2N7002K, 2V7002KSmall Signal MOSFET60 V, 380 mA, Single, N-Channel, SOT-23Features ESD Protected Low RDS(on)http://onsemi.com Surface Mount Package 2V Prefix for Automotive and Other Applications Requiring UniqueV(BR)DSS RDS(on) MAX ID MAXSite and Control Change Requirements; AEC-Q101 Qualified and1.6 W @ 10 VPPAP Capable60 V 380 mA2.5 W @ 4.5 V Thes

6.1. Size:626K wietron
2n7002kt.pdf

2N7002KTN-Channel ENHANCEMENT MODE POWER MOSFET3P b Lead(Pb)-Free12FEATURES:SC-89* Gate-Source ESD Protected: 1500 V* Fast Switching SpeedDrain* Low On-Resistance* Low Voltage Driver3APPLICATIONS:* Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories* Battery Operated Systems* Power Supply Converter Circuits1 (Top View) 2* Load/Power Switching Ce

6.2. Size:261K panjit
2n7002ktb.pdf

2N7002KTB60V N-Channel Enhancement Mode MOSFET - ESD ProtectedFEATURES RDS(ON), VGS@10V,IDS@500mA=3 RDS(ON), VGS@4.5V,IDS@200mA=4 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition0.052(1.30)0.024(0.60) Specially Designed for Battery Operated Systems, Solid-State Relays0.

6.3. Size:1518K slkor
2n7002kt.pdf

2N7002KTN-Channel Enhancement Mode Field Effect TransistorProduct Summary V 60VDS I 100mAD R ( at V =10V) 8.0 DS(ON) GS R ( at V =4.5V) 13.0 DS(ON) GS ESD Protected Up to 2.0KV (HBM)General Description Trench Power LV MOSFET technology High Power and current handing capabilityApplications SOT-523 Load/Power Switching Int

6.4. Size:1171K leiditech
2n7002kt.pdf

2N7002KT SOT-523 Plastic-Encapsulate Mosfets Features Gate 1 High density cell design for low R DS (ON) Voltage controlled small signal switch 3 Drain Rugged and reliable High saturation current capability Source 2Applications (Top View) Load Switch for Portable Devices DC/DC Converter Marking: KN Maximum Ratings (T =25C unless otherwise spe

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