2N7002KT1G Specs and Replacement

Type Designator: 2N7002KT1G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.38 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 4.2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: SOT-23

2N7002KT1G substitution

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2N7002KT1G datasheet

 ..1. Size:102K  onsemi
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2N7002KT1G

2N7002K, 2V7002K Small Signal MOSFET 60 V, 380 mA, Single, N-Channel, SOT-23 Features ESD Protected Low RDS(on) http //onsemi.com Surface Mount Package 2V Prefix for Automotive and Other Applications Requiring Unique V(BR)DSS RDS(on) MAX ID MAX Site and Control Change Requirements; AEC-Q101 Qualified and 1.6 W @ 10 V PPAP Capable 60 V 380 mA 2.5 W @ 4.5 V Thes... See More ⇒

 6.1. Size:626K  wietron
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2N7002KT1G

2N7002KT N-Channel ENHANCEMENT MODE POWER MOSFET 3 P b Lead(Pb)-Free 1 2 FEATURES SC-89 * Gate-Source ESD Protected 1500 V * Fast Switching Speed Drain * Low On-Resistance * Low Voltage Driver 3 APPLICATIONS * Drivers Relays, Solenoids, Lamps, Hammers,Displays, Memories * Battery Operated Systems * Power Supply Converter Circuits 1 (Top View) 2 * Load/Power Switching Ce... See More ⇒

 6.2. Size:261K  panjit
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2N7002KT1G

2N7002KTB 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES RDS(ON), VGS@10V,IDS@500mA=3 RDS(ON), VGS@4.5V,IDS@200mA=4 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition 0.052(1.30) 0.024(0.60) Specially Designed for Battery Operated Systems, Solid-State Relays 0.... See More ⇒

 6.3. Size:1518K  slkor
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2N7002KT1G

2N7002KT N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 100mA D R ( at V =10V) 8.0 DS(ON) GS R ( at V =4.5V) 13.0 DS(ON) GS ESD Protected Up to 2.0KV (HBM) General Description Trench Power LV MOSFET technology High Power and current handing capability Applications SOT-523 Load/Power Switching Int... See More ⇒

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Detailed specifications: 2N7002DCSM, 2N7002DSGP, 2N7002EGP, 2N7002ESEGP, 2N7002ESGP, 2N7002-G, 2N7002GP, 2N7002GP-A, AON7506, 2N7002KTB, 2N7002K-TP, 2N7002SESGP, 2N7002SGP, 2N7002SSGP, 2N7002TA, 2N7002TB, 2N7002TC

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