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2N60G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N60G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
   Paquete / Cubierta: TO-252
     - Selección de transistores por parámetros

 

2N60G Datasheet (PDF)

 ..1. Size:364K  nell
2n60a 2n60af 2n60g.pdf pdf_icon

2N60G

RoHS 2N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(2A, 600Volts)DESCRIPTIOND The Nell 2N60 is a three-terminal silicon Ddevice with current conduction capabilityof 2A, fast switching speed, low on-stateresistance, breakdown voltage rating of 600V,and max. threshold voltage of 4 volts.G They are designed for use in applications such

 0.1. Size:1150K  infineon
skb02n60g.pdf pdf_icon

2N60G

SKB02N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers: - very tight

 0.2. Size:353K  infineon
sgp02n60 sgd02n60g.pdf pdf_icon

2N60G

SGP02N60 SGD02N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-

 0.3. Size:289K  utc
2n60l-tm3-t 2n60g-tm3-t 2n60l-tma-t 2n60g-tma-t 2n60l-tms-t 2n60g-tms-t 2n60l-tms2-t 2n60g-tms2-t 2n60l-tms4-t 2n60g-tms4-t.pdf pdf_icon

2N60G

UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application

Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: IXTP50N28T | 3SK249

 

 
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