All MOSFET. 2N60G Datasheet

 

2N60G Datasheet and Replacement


   Type Designator: 2N60G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO-252
 

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2N60G Datasheet (PDF)

 ..1. Size:364K  nell
2n60a 2n60af 2n60g.pdf pdf_icon

2N60G

RoHS 2N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(2A, 600Volts)DESCRIPTIOND The Nell 2N60 is a three-terminal silicon Ddevice with current conduction capabilityof 2A, fast switching speed, low on-stateresistance, breakdown voltage rating of 600V,and max. threshold voltage of 4 volts.G They are designed for use in applications such

 0.1. Size:1150K  infineon
skb02n60g.pdf pdf_icon

2N60G

SKB02N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers: - very tight

 0.2. Size:353K  infineon
sgp02n60 sgd02n60g.pdf pdf_icon

2N60G

SGP02N60 SGD02N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-

 0.3. Size:289K  utc
2n60l-tm3-t 2n60g-tm3-t 2n60l-tma-t 2n60g-tma-t 2n60l-tms-t 2n60g-tms-t 2n60l-tms2-t 2n60g-tms2-t 2n60l-tms4-t 2n60g-tms4-t.pdf pdf_icon

2N60G

UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application

Datasheet: SVS5N70MN , SVS5N70F , SVS5N70MU , WFP85N06 , 2N5653 , 2N5654 , 2N60A , 2N60AF , IRFB4115 , 2N6568 , 2N6659-2 , 2N6659X , 2N6660-2 , 2N6660C4A , 2N6660CSM4 , 2N6661-2 , 2N6661CSM4 .

History: NCE3008Y

Keywords - 2N60G MOSFET datasheet

 2N60G cross reference
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