2N60G - Даташиты. Аналоги. Основные параметры
Наименование производителя: 2N60G
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 44 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 25 ns
Cossⓘ - Выходная емкость: 40 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm
Тип корпуса: TO-252
Аналог (замена) для 2N60G
2N60G Datasheet (PDF)
2n60a 2n60af 2n60g.pdf
RoHS 2N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(2A, 600Volts)DESCRIPTIOND The Nell 2N60 is a three-terminal silicon Ddevice with current conduction capabilityof 2A, fast switching speed, low on-stateresistance, breakdown voltage rating of 600V,and max. threshold voltage of 4 volts.G They are designed for use in applications such
skb02n60g.pdf
SKB02N60Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology for 600V applications offers: - very tight
sgp02n60 sgd02n60g.pdf
SGP02N60 SGD02N60Fast IGBT in NPT-technology C 75% lower Eoff compared to previous generation combined with low conduction losses Short circuit withstand time 10 s GE Designed for: - Motor controls - Inverter NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-
2n60l-tm3-t 2n60g-tm3-t 2n60l-tma-t 2n60g-tma-t 2n60l-tms-t 2n60g-tms-t 2n60l-tms2-t 2n60g-tms2-t 2n60l-tms4-t 2n60g-tms4-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistanceand have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching application
Другие MOSFET... SVS5N70MN , SVS5N70F , SVS5N70MU , WFP85N06 , 2N5653 , 2N5654 , 2N60A , 2N60AF , P55NF06 , 2N6568 , 2N6659-2 , 2N6659X , 2N6660-2 , 2N6660C4A , 2N6660CSM4 , 2N6661-2 , 2N6661CSM4 .
History: JMPL1050PK | 2SK2382 | PTP90N08 | AP05N50EH-HF | SSPL2015F
History: JMPL1050PK | 2SK2382 | PTP90N08 | AP05N50EH-HF | SSPL2015F
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