SFS9640 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SFS9640
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 46 nC
   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 207 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
   Paquete / Cubierta: TO220F

Búsqueda de reemplazo de MOSFET SFS9640

SFS9640 Datasheet (PDF)

..1. Size:505K samsung
sfs9640.pdf

Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -6.2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V Low RDS(ON) : 0.344 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V

8.1. Size:503K samsung
sfs9644.pdf

Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = -4.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -250V Low RDS(ON) : 0.549 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V

9.1. Size:256K fairchild semi
sfs9634.pdf

SFS9634Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = -3.4 A Improved Gate Charge Extended Safe Operating AreaTO-220F Lower Leakage Current : 10 A (Max.) @ VDS = -250V Low RDS(ON) : 0.876 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol

9.2. Size:502K samsung
sfs9630.pdf

Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = -4.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V Low RDS(ON) : 0.581 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V

9.3. Size:502K samsung
sfs9624.pdf

Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 2.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = -2.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -250V Low RDS(ON) : 1.65 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

9.4. Size:501K samsung
sfs9620.pdf

Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = -3.0 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V Low RDS(ON) : 1.111 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V

9.5. Size:499K samsung
sfs9634.pdf

Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = -3.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -250V Low RDS(ON) : 0.876 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V

9.6. Size:491K samsung
sfs9610.pdf

Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = -1.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V Low RDS(ON) : 2.25 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val

9.7. Size:499K samsung
sfs9614.pdf

Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = -1.27 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -250V Low RDS(ON) : 3.5 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va

Otros transistores... SFS9530 , SFS9540 , SFS9610 , SFS9614 , SFS9620 , SFS9624 , SFS9630 , SFS9634 , 50N06 , SFS9644 , SFS9Z14 , SFS9Z24 , SFS9Z34 , SFU2955 , SFU9014 , SFU9024 , SFU9034 .

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